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Tuning the Amount of Oxygen Vacancies in Sputter‐Deposited SnOx films for Enhancing the Performance of Perovskite Solar Cells
ChemSusChem ( IF 7.5 ) Pub Date : 2018-09-04 , DOI: 10.1002/cssc.201801541 Fawad Ali 1 , Ngoc Duy Pham 1 , H. Jonathan Bradford 1 , Nima Khoshsirat 1 , Ken Ostrikov 1 , John M. Bell 1 , Hongxia Wang 1 , Tuquabo Tesfamichael 1
ChemSusChem ( IF 7.5 ) Pub Date : 2018-09-04 , DOI: 10.1002/cssc.201801541 Fawad Ali 1 , Ngoc Duy Pham 1 , H. Jonathan Bradford 1 , Nima Khoshsirat 1 , Ken Ostrikov 1 , John M. Bell 1 , Hongxia Wang 1 , Tuquabo Tesfamichael 1
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This work demonstrates the effect of oxygen vacancies in SnOx thin films on the performance of perovskite solar cells. Various SnOx films with different amounts of oxygen vacancies were deposited by sputtering at different substrate temperatures (25–300 °C). The transmittance of the films decreased from 82 to 66 % with increasing deposition temperature from 25 to 300 °C. Both X‐ray photoelectron spectroscopy and electron‐spin resonance spectroscopy confirmed that a higher density of oxygen vacancies was created within the SnOx film at a high substrate temperature, which caused narrowing of the SnOx bandgap from 4.1 (25 °C) to 3.74 eV (250 °C). Combined ultraviolet photoelectron spectroscopy and UV/Vis spectroscopy showed an excellent conduction band position alignment between the methylammonium lead iodide perovskite layer (3.90 eV) and the SnOx electron transport layer deposited at 250 °C (3.92 eV). As a result, a significant enhancement of the open‐circuit voltage from 0.82 to 1.0 V was achieved, resulting in an increase of the power conversion efficiency of the perovskite solar cells from 11 to 14 %. This research demonstrated a facile approach for controlling the amount of oxygen vacancies in SnOx thin films to achieve a desirable energy alignment with the perovskite absorber layer for enhanced device performance.
中文翻译：
调整溅射沉积SnOx膜中的氧空位量以增强钙钛矿太阳能电池的性能
这项工作证明了SnO x薄膜中氧空位对钙钛矿太阳能电池性能的影响。在不同的基板温度（25–300°C）下通过溅射沉积具有不同氧空位数量的各种SnO x膜。随着沉积温度从25°C升高到300°C，薄膜的透射率从82％降低到66％。X射线光电子能谱和电子自旋共振能谱均证实，在高衬底温度下，SnO x膜内会产生更高密度的氧空位，从而导致SnO x变窄。带隙从4.1（25°C）到3.74 eV（250°C）。组合的紫外光电子能谱和UV / Vis光谱显示出在甲基铵碘化铅钙钛矿层（3.90 eV）和沉积在250°C（3.92 eV）的SnO x电子传输层之间的出色的导带位置对准。结果，将开路电压从0.82显着提高到1.0 V，从而使钙钛矿太阳能电池的功率转换效率从11％提高到14％。这项研究证明了一种控制SnO x薄膜中氧空位数量的简便方法，可实现与钙钛矿吸收层的理想能量对准，从而提高器件性能。
更新日期：2018-09-04
中文翻译：
调整溅射沉积SnOx膜中的氧空位量以增强钙钛矿太阳能电池的性能
这项工作证明了SnO x薄膜中氧空位对钙钛矿太阳能电池性能的影响。在不同的基板温度（25–300°C）下通过溅射沉积具有不同氧空位数量的各种SnO x膜。随着沉积温度从25°C升高到300°C，薄膜的透射率从82％降低到66％。X射线光电子能谱和电子自旋共振能谱均证实，在高衬底温度下，SnO x膜内会产生更高密度的氧空位，从而导致SnO x变窄。带隙从4.1（25°C）到3.74 eV（250°C）。组合的紫外光电子能谱和UV / Vis光谱显示出在甲基铵碘化铅钙钛矿层（3.90 eV）和沉积在250°C（3.92 eV）的SnO x电子传输层之间的出色的导带位置对准。结果，将开路电压从0.82显着提高到1.0 V，从而使钙钛矿太阳能电池的功率转换效率从11％提高到14％。这项研究证明了一种控制SnO x薄膜中氧空位数量的简便方法，可实现与钙钛矿吸收层的理想能量对准，从而提高器件性能。
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