Anodization of gate metals can form thin and robust oxide dielectrics of low-voltage-driven organic thin-film transistors (TFTs) for low-cost, flexible electronics. However, anodic oxide dielectrics have rarely been applied to circuit fabrication with complex layouts because separate gate electrode islands cannot be anodized at the same time. To overcome this limitation, we devise a method to simultaneously anodize multiple aluminum gate islands using removable interconnects. The anodic oxide properties, including dielectric constant, film thickness, and leakage current, were thoroughly investigated by varying anodization voltages from 5 to 50 V and a self-assembled monolayer treatment. By printing p-type polymer ink on top of the pattern-grown anodic oxide dielectrics, p-type organic TFTs were fabricated on a 2-μm-thick Parylene substrate. The printed TFTs exhibited subthreshold swing of 200 mV·dec⁻¹, carrier mobility of 0.3 cm² V⁻¹ s⁻¹, and threshold voltage of 0.17 V on average. Even when the substrate film was crumpled, the TFT characteristics did not substantially changed. Finally, a 3 V differential amplifier with multiple gate islands was successfully demonstrated. These findings suggest that high-quality anodic metal oxide films, when fully incorporated into a low-cost, large-area manufacturing process, can be applied to the fabrication of complex, low-voltage-driven TFT circuits on flexible substrates.

栅极金属的阳极氧化可形成低压驱动有机薄膜晶体管（TFT）的薄而坚固的氧化物电介质，用于低成本，灵活的电子产品。然而，因为不能同时阳极氧化单独的栅电极岛，所以阳极氧化物电介质很少用于具有复杂布局的电路制造中。为了克服此限制，我们设计了一种方法，使用可移动互连同时对多个铝制门岛进行阳极氧化。通过改变5至50 V的阳极氧化电压并进行自组装单层处理，对包括介电常数，膜厚度和泄漏电流在内的阳极氧化物性能进行了全面研究。通过在图案生长的阳极氧化物电介质上印刷p型聚合物油墨，在2μm厚的Parylene基板上制造了p型有机TFT。^-1，载流子迁移率平均为0.3 cm ²  V ^-1  s ^-1和阈值电压为0.17V。即使当基板膜被弄皱时，TFT特性也基本没有改变。最后，成功演示了具有多个栅极岛的3 V差分放大器。这些发现表明，高质量的阳极金属氧化物膜，当完全结合到低成本，大面积的制造过程中时，可用于在柔性基板上制造复杂的，低压驱动的TFT电路。