Doping of nitrogen is a promising strategy to modulate chemical, electronic, and structural functionalities of graphene (G)and graphene quantum dots (GQDs) for their outstanding properties in energy and environmental applications.This paper reviews various synthesis approaches of nitrogen-doped graphene (N-G) and nitrogen-doped graphene quantum dots (N-GQDs).;Thermal, ultrasonic, solvothermal, hydrothermal, and electron-beam methods have been applied to synthesize N-G and N-GQDs.These nitrogen-doped carbon materials are characterized to obtain their structural configurations in order to achieve better performance in their applications compared to only either graphene or graphene quantum dots.Both N-G and N-GQDs may be converted into functional materials by integrating with other compounds such as metal oxides/nitrides, polymers, and semiconductors.These functional materials demonstrate superior performance over N-G and N-GQDs materials.Examples of applications of N-G and N-GQDs include supercapacitors, batteries, sensors, fuel cells, solar cells, and photocatalyst.

氮的掺杂是调节石墨烯（G）和石墨烯量子点（GQD）的化学，电子和结构功能的一种有前途的策略，以使其在能源和环境应用中具有出色的性能。 NG）和氮掺杂的石墨烯量子点（N-GQDs）;热，超声，溶剂热，水热和电子束方法已被用于合成NG和N-GQDs。这些氮掺杂的碳材料与仅石墨烯或石墨烯量子点相比，其特征在于获得其结构构型，以便在其应用中实现更好的性能。NG和N-GQD均可通过与其他化合物（例如金属氧化物/氮化物）结合而转化为功能材料，聚合物，和半导体。这些功能性材料表现出超过NG和NG和N- GQDs的应用的N- GQDs materials.Examples优越的性能包括超级电容器，电池，传感器，燃料电池，太阳能电池和光催化剂。