Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
The crystallization kinetics of Co doping on Ni–Mn–Sn magnetic shape memory alloy thin films
RSC Advances ( IF 3.9 ) Pub Date : 2018-07-18 00:00:00 , DOI: 10.1039/c8ra04618b Changlong Tan 1 , Jiachen Zhu 1 , Zhenhua Wang 1 , Kun Zhang 1 , XiaoHua Tian 1 , Wei Cai 2
RSC Advances ( IF 3.9 ) Pub Date : 2018-07-18 00:00:00 , DOI: 10.1039/c8ra04618b Changlong Tan 1 , Jiachen Zhu 1 , Zhenhua Wang 1 , Kun Zhang 1 , XiaoHua Tian 1 , Wei Cai 2
Affiliation
|
Co doping is an effective means to improve the performance of Ni–Mn–Sn alloy bulks and thin films. However, the Co doping effect on the crystallization process of the Ni–Mn–Sn alloy thin films is important but not clear. Therefore, we investigate the influence of Co doping on the crystallization kinetics for Ni50Mn37−xSn13Cox (x = 0, 0.5, 1.5, 4) magnetic shape memory alloy thin films by DSC analysis. For the non-isothermal process, each DSC curve has a single exothermic peak, which is asymmetrical. The crystallization peak temperatures and the activation energy of thin films both rise gradually with increasing Co content. Then, the activation energy of Ni50Mn37−xSn13Cox (x = 0, 0.5, 1.5, 4) thin films obtained by the Kissinger equation method is determined as 157.9 kJ mol−1, 198.8 kJ mol−1, 213 kJ mol−1 and 253.6 kJ mol−1, respectively. The local activation energy of thin films with different Co content show the different variation tendency. In the isothermal crystallization, the average of the Avrami exponent n for thin films of each Co content is approximately 1.5, suggesting that the mechanism of crystallization is two-dimensional diffusion-controlled growth for Ni50Mn37−xSn13Cox (x = 0, 0.5, 1.5, 4) thin films.
中文翻译：
Co掺杂在Ni-Mn-Sn磁性形状记忆合金薄膜上的结晶动力学
Co掺杂是提高Ni-Mn-Sn合金块体和薄膜性能的有效手段。然而，Co掺杂对Ni-Mn-Sn合金薄膜结晶过程的影响很重要，但尚不清楚。因此，我们通过DSC分析研究了Co掺杂对Ni 50 Mn 37− x Sn 13 Co x ( x = 0, 0.5, 1.5, 4)磁性形状记忆合金薄膜结晶动力学的影响。对于非等温过程，每条 DSC 曲线都有一个不对称的放热峰。随着Co含量的增加，薄膜的结晶峰温度和活化能均逐渐升高。则 Ni 50 Mn的活化能通过Kissinger方程法获得的37- x Sn 13 Co x ( x = 0, 0.5, 1.5, 4)薄膜被确定为157.9 kJ mol -1、198.8 kJ mol -1、213 kJ mol -1和253.6 kJ mol -1，分别。不同Co含量薄膜的局部活化能表现出不同的变化趋势。在等温结晶中，每种Co含量薄膜的平均Avrami指数n约为1.5，表明结晶机制是Ni 50 Mn 37− x Sn 13的二维扩散控制生长Co x ( x = 0, 0.5, 1.5, 4) 薄膜。
更新日期：2018-07-18
中文翻译：
Co掺杂在Ni-Mn-Sn磁性形状记忆合金薄膜上的结晶动力学
Co掺杂是提高Ni-Mn-Sn合金块体和薄膜性能的有效手段。然而，Co掺杂对Ni-Mn-Sn合金薄膜结晶过程的影响很重要，但尚不清楚。因此，我们通过DSC分析研究了Co掺杂对Ni 50 Mn 37− x Sn 13 Co x ( x = 0, 0.5, 1.5, 4)磁性形状记忆合金薄膜结晶动力学的影响。对于非等温过程，每条 DSC 曲线都有一个不对称的放热峰。随着Co含量的增加，薄膜的结晶峰温度和活化能均逐渐升高。则 Ni 50 Mn的活化能通过Kissinger方程法获得的37- x Sn 13 Co x ( x = 0, 0.5, 1.5, 4)薄膜被确定为157.9 kJ mol -1、198.8 kJ mol -1、213 kJ mol -1和253.6 kJ mol -1，分别。不同Co含量薄膜的局部活化能表现出不同的变化趋势。在等温结晶中，每种Co含量薄膜的平均Avrami指数n约为1.5，表明结晶机制是Ni 50 Mn 37− x Sn 13的二维扩散控制生长Co x ( x = 0, 0.5, 1.5, 4) 薄膜。
京公网安备 11010802027423号