An apparent kinetic model for the chemical vapor deposition of SiO₂ from tetraethyl orthosilicate (TEOS) and O₂ was developed in a poorly investigated range of operating conditions, that is, at atmospheric pressure and between 350 and 500°C, based on literature survey and experimental results obtained in a hot wall tubular reactor. The kinetic model was implemented into the computational fluid dynamics code FLUENT and validated both in shape and value by comparison with experimental deposition rate profiles. It reveals that for the conditions tested, a possible mechanism of SiO ₂ deposition involves two intermediate species formed from TEOS homogeneous decomposition, the first one being active from 300°C and the second one contributing to deposition for temperatures higher than 370°C. The calculated local profiles of gas flow, gas temperature, species mass fraction, and silica deposition rate indicate that the first intermediate species leads to marked film thickness gradients, the second one being more stable as producing uniform thicknesses. © 2018 American Institute of Chemical Engineers AIChE J, 64: 3958–3966, 2018

中文翻译：

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用原硅酸四乙酯和氧气对SiO2薄膜进行中温化学气相沉积动力学模型的建立

根据文献调查，在未充分研究的工作条件范围内（即在大气压下和350至500°C之间），开发了从原硅酸四乙酯（TEOS）和O ₂进行SiO ₂化学气相沉积的表观动力学模型。和在热壁管式反应器中获得的实验结果。将动力学模型实施到计算流体动力学代码FLUENT中，并通过与实验沉积速率曲线进行比较，对形状和值进行了验证。结果表明，在所测试的条件下，SiO ₂的可能机理 沉积涉及由TEOS均匀分解形成的两个中间物种，第一个在300°C时具有活性，第二个在高于370°C的温度下有助于沉积。计算出的气体流量，气体温度，物质质量分数和二氧化硅沉积速率的局部分布图表明，第一种中间物质会导致明显的膜厚梯度，而第二种会产生均匀的厚度，因此更加稳定。©2018美国化学工程师学会AIChE J，64：3958-3966，2018