A Laser and Electric Pulse Modulated Nonvolatile Photoelectric Response in Nanoscale Copper Dusted Metal‐Oxide‐Semiconductor Structures,Advanced Electronic Materials

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A Laser and Electric Pulse Modulated Nonvolatile Photoelectric Response in Nanoscale Copper Dusted Metal‐Oxide‐Semiconductor Structures
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2018-07-16 , DOI: 10.1002/aelm.201800234
Zhikai Gan _{1,

2} , Peiqi Zhou ₁ , Anhua Dong ₁ , Diyuan Zheng ₁ , Hui Wang ₁

Affiliation

A novel photoelectric response observed in a nanoscale Cu‐dusted Cu–SiO₂–Si structure is reported. By combining the application of a short voltage pulse with laser illumination, the photoelectric response of the structure can be permanently changed. Intriguingly, if a second voltage pulse of reverse polarity is applied under similar laser illumination, the photoelectric response of the structure can be restored to its initial state, showing that the photoelectric states of the structure can be switched back and forth in a nonvolatile manner. This phenomenon is attributed to a controllable change of height of the Schottky barrier formed between the Cu nanoparticles and the N‐type silicon substrate, indicating that tunneling of confined photoelectrons from the Si causes an adjustment of the Fermi level of the Cu particles. The work suggests a new switching approach for tailoring photoelectric sensors, nonvolatile memories, and even solar cells related materials.

中文翻译：

纳米粉尘金属-氧化物-半导体结构中的激光和电脉冲调制的非易失性光电响应

纳米级粉尘Cu–SiO _2中观察到的新型光电响应-硅结构被报道。通过将短电压脉冲的施加与激光照射相结合，可以永久改变结构的光电响应。有趣的是，如果在相似的激光照射下施加相反极性的第二电压脉冲，则该结构的光电响应可以恢复到其初始状态，表明该结构的光电状态可以以非易失性方式来回切换。这种现象归因于在铜纳米颗粒和N型硅衬底之间形成的肖特基势垒的高度可控地变化，这表明从Si产生的受限光电子隧穿导致了Cu粒子的费米能级的调节。这项工作提出了一种用于定制光电传感器的新开关方法，

更新日期：2018-07-16

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