Abstract CaCu3Ti4O12 (CCTO) thin film was deposited on ITO substrate using radio frequency (RF) magnetron sputtering at various deposition times (1–4 h). The significant effects of deposition time on the structural, morphological, optical and electrical properties were systematically investigated using XRD, AFM, FESEM, UV–Vis, and Hall Effect measurements. XRD study showed that all sputtered films have cubic structure. Higher deposition times of up to 4 h enhanced the film's crystallinity, as demonstrated by the increase in peak intensity and incremental change in crystal size (from 19.5 to 23.6 nm). Roughness (Ra) and root mean square (RMS) values were found to increase from 1.99 to 5.15 nm and 2.66–6.68 nm, respectively, when deposition times were increased. The surface morphology of CCTO thin films were found to be smooth, compact, and densely island-shaped in structure. The film thickness increased from 270 to 330 nm with increase in deposition time. Increase in deposition time also affected the optical transmittance values which declined to 70% at the visible range and the optical energy band gap which decreased from 3.76 to 3.29 eV. At 4 h deposition time, the films showed lower resistivity (of 8.22 Ω/sq), and higher Hall mobility (78.43 cm2/Vs) and carrier concentration (9.84 × 1015 cm−2). The conclusion drawn from this study revealed that by controlling the deposition time, better properties of CCTO thin films can be achieved.

中文翻译：

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常温射频磁控溅射沉积时间对ITO衬底CaCu 3 Ti 4 O 12 薄膜性能的影响

摘要 CaCu3Ti4O12 (CCTO) 薄膜使用射频 (RF) 磁控溅射在不同的沉积时间 (1-4 小时) 沉积在 ITO 基板上。使用 XRD、AFM、FESEM、UV-Vis 和霍尔效应测量系统研究了沉积时间对结构、形态、光学和电学性质的显着影响。XRD研究表明所有溅射薄膜都具有立方结构。高达 4 小时的更高沉积时间增强了薄膜的结晶度，这可以通过峰值强度的增加和晶体尺寸的增量变化（从 19.5 到 23.6 nm）来证明。当沉积时间增加时，发现粗糙度 (Ra) 和均方根 (RMS) 值分别从 1.99 增加到 5.15 nm 和 2.66-6.68 nm。发现 CCTO 薄膜的表面形貌光滑、致密、且结构呈岛状密集。随着沉积时间的增加，薄膜厚度从 270 nm 增加到 330 nm。沉积时间的增加也影响了可见光范围内的光学透射率值下降至 70%，以及光学能带隙从 3.76 eV 下降至 3.29 eV。在 4 小时的沉积时间，薄膜表现出较低的电阻率（8.22 Ω/sq）、较高的霍尔迁移率（78.43 cm2/Vs）和载流子浓度（9.84 × 1015 cm-2）。该研究得出的结论表明，通过控制沉积时间，可以获得更好的 CCTO 薄膜性能。沉积时间的增加也影响了可见光范围内的光学透射率值下降至 70%，以及光学能带隙从 3.76 eV 下降至 3.29 eV。在 4 小时的沉积时间，薄膜表现出较低的电阻率（8.22 Ω/sq）、较高的霍尔迁移率（78.43 cm2/Vs）和载流子浓度（9.84 × 1015 cm-2）。该研究得出的结论表明，通过控制沉积时间，可以获得更好的 CCTO 薄膜性能。沉积时间的增加也影响了可见光范围内的光学透射率值下降至 70%，以及光学能带隙从 3.76 eV 下降至 3.29 eV。在 4 小时的沉积时间，薄膜表现出较低的电阻率（8.22 Ω/sq）、较高的霍尔迁移率（78.43 cm2/Vs）和载流子浓度（9.84 × 1015 cm-2）。该研究得出的结论表明，通过控制沉积时间，可以获得更好的 CCTO 薄膜性能。