In the present work, we have synthesized novel Se_78−xAg_xTe₂₀Sn₂ (0 ≤ x ≤ 6) semiconducting glasses for improving thermally activated a.c. conduction in STS glass (x = 0). The results of the experimental analysis of thermally activated a.c. conduction have been reported in terms of frequency and temperature of Se_78−xAg_xTe₂₀Sn₂ (0 ≤ x ≤ 6) glasses. The frequency dependent experimental data of a.c. conductivity σ_ac show that σ_ac follows the Jonscher universal power law. Variation of a.c. conductivity with temperature obeys the Arrhenius relation. Further analysis confirms that the density of defect states can be determined on the basis of a correlated barrier hopping model using the frequency/temperature dependence of a.c. conductivity σ_ac (T,ω). The analysis of composition dependence of various electric parameters like potential barrier height W_m, hopping distances R_min and R_ω, dielectric constant (ε′) and the density of defect states N shows that hopping conduction is improved after silver incorporation into the parent glass. This is explained in terms of a dipolar model by considering the dipoles of Ag⁺ ions with negatively charged defect states.

中文翻译：

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掺银可增强半导体STS（Se–Te–Sn）玻璃中基于极化子跳跃的交流传导

在目前的工作中，我们已经合成了新颖的硒_{78- X}的Ag _X碲₂₀的Sn ₂（0≤ X ≤6）半导体眼镜用于改善热活化交流传导在STS玻璃（X = 0）。热活化交流传导的实验分析的结果已在频率和Se的温度方面被报道_{78- X}的Ag _X碲₂₀的Sn ₂（0≤ X ≤6）玻璃。的交流电导率的依赖于频率的实验数据σ_交流表明σ_交流遵循琼斯（Jonscher）通用幂律。交流电导率随温度的变化服从阿伦尼乌斯（Arrhenius）关系。进一步的分析证实，缺陷态密度可以相互关联的屏障使用交流电导率的频率/温度依赖性跳频模式的基础上确定σ_交流（Ť，ω）。各种电参数，如势垒高度的组成依赖性的分析W¯¯_米，跳跃距离ř_分钟和- [R _ω，介电常数（ε '）和缺陷的密度状态Ñ表明在将银掺入母体玻璃中之后，跳跃传导得以改善。这是通过考虑具有负电荷缺陷状态的Ag ⁺离子的偶极子以偶极子模型来解释的。