The study of neuronal and neurodegenerative diseases requires the development of new tools and technologies to create functional neuroelectronics allowing both stimulation and recording of cellular electrical activity. We present a model that describes electrolyte-gated organic field-effect transistors (EGOFETs) as neural interfaces. We show that our model can be successfully applied to understand the behaviour of a more general class of devices, including both organic and inorganic transistors. We introduce the reference-less (RL-) EGOFET and we show that it might be successfully used as a low cost and flexible neural interface for extracellular recording in vivo without the need of a reference electrode, making the implant less invasive and easier to use. The working principle underlying RL-EGOFETs involves self-polarization and back-gate stimulation, which we show experimentally to be feasible. Our results open the door to using and optimizing EGOFETs and RL-EGOFETs for neural interfaces.

对神经元和神经退行性疾病的研究需要开发新的工具和技术来创建功能性神经电子器件，从而既可以刺激又可以记录细胞电活动。我们提出了一个模型，该模型将电解质门控有机场效应晶体管（EGOFET）描述为神经接口。我们证明了我们的模型可以成功地应用于理解更一般的一类器件的行为，包括有机和无机晶体管。我们介绍了无参考（RL-）EGOFET，我们证明它可以成功地用作低成本且灵活的神经接口，用于体内细胞外记录，而无需参考电极，从而使植入物的侵入性更小且更易于使用。RL-EGOFET的基本工作原理涉及自极化和背栅激励，我们通过实验证明这是可行的。我们的结果为为神经接口使用和优化EGOFET和RL-EGOFET打开了大门。