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Sequential Fluorination on Napthaleneamide-Based Conjugated Polymers and Their Impact on Charge Transport Properties
Macromolecules ( IF 5.1 ) Pub Date : 2018-07-16 00:00:00 , DOI: 10.1021/acs.macromol.8b00748 Kakaraparthi Kranthiraja 1 , Dang Xuan Long 2 , Vijaya Gopalan Sree 1 , Woosum Cho 1 , Young-Rae Cho 3 , Abbas Zaheer 4, 5 , Jong-Cheol Lee 4, 5 , Yong-Young Noh 2 , Sung-Ho Jin 1
Macromolecules ( IF 5.1 ) Pub Date : 2018-07-16 00:00:00 , DOI: 10.1021/acs.macromol.8b00748 Kakaraparthi Kranthiraja 1 , Dang Xuan Long 2 , Vijaya Gopalan Sree 1 , Woosum Cho 1 , Young-Rae Cho 3 , Abbas Zaheer 4, 5 , Jong-Cheol Lee 4, 5 , Yong-Young Noh 2 , Sung-Ho Jin 1
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Improving π-conjugated polymer electron transport and injection efficiency are important to realize high performance n-channel organic field-effect transistors (OFETs). This paper reports a series of naphthalene diimide (NDI-) based n-type π-conjugated polymers, NDI-T-1FP-T, NDI-T-2FP-T, and NDI-T-4FP-T, with varioulis amounts of fluorine atoms (1F, 2F, and 4F) in their backbones. We found notable differences in energy levels, ground and excited state dipole moments (Δμge), exciton lifetimes, dihedral angles, and charge transport properties by varying the fluorine content: Δμge and charge transport properties reduced with increasing fluorine content. Electron mobility of optimized top gate bottom contact OFETs using the n-type π-conjugated polymers were 0.35, 0.18, and 0.16 cm2 V–1 s–1, respectively. OFET performances were further improved further by low concentration polyethylenimine (PEI) doping, significantly improving field-effect mobility to (maximum) 0.51, 0.34, and 0.26 cm2 V–1 s–1, respectively. Doped NDI-T-4FP-T with 4F in particular showed unipolar n-channel behavior by depletion of the hole current.
中文翻译：
萘酰胺基共轭聚合物上的顺序氟化及其对电荷传输性能的影响
改善π共轭聚合物的电子传输和注入效率对于实现高性能n沟道有机场效应晶体管（OFET）至关重要。本文报道了一系列基于萘二酰亚胺（NDI-）的n型π-共轭聚合物NDI-T-1FP-T，NDI-T-2FP-T和NDI-T-4FP-T，其中静脉粉量为主链中的氟原子（1F，2F和4F）。我们发现在能量水平，基态和激发态的偶极矩（Δμ显着的差异GE），激子的寿命，二面角，和电荷传输性通过改变氟含量：Δμ GE随氟含量降低，并且电荷传输性能。使用n型π共轭聚合物的优化顶栅底接触式OFET的电子迁移率分别为0.35、0.18和0.16 cm分别为2 V –1 s –1。低浓度聚乙烯亚胺（PEI）掺杂进一步改善了OFET的性能，显着提高了场效应迁移率，分别达到（最大）0.51、0.34和0.26 cm 2 V –1 s –1。特别是用4F掺杂的NDI-T-4FP-T通过空穴电流的耗尽表现出单极n沟道行为。
更新日期：2018-07-16
中文翻译：
萘酰胺基共轭聚合物上的顺序氟化及其对电荷传输性能的影响
改善π共轭聚合物的电子传输和注入效率对于实现高性能n沟道有机场效应晶体管（OFET）至关重要。本文报道了一系列基于萘二酰亚胺（NDI-）的n型π-共轭聚合物NDI-T-1FP-T，NDI-T-2FP-T和NDI-T-4FP-T，其中静脉粉量为主链中的氟原子（1F，2F和4F）。我们发现在能量水平，基态和激发态的偶极矩（Δμ显着的差异GE），激子的寿命，二面角，和电荷传输性通过改变氟含量：Δμ GE随氟含量降低，并且电荷传输性能。使用n型π共轭聚合物的优化顶栅底接触式OFET的电子迁移率分别为0.35、0.18和0.16 cm分别为2 V –1 s –1。低浓度聚乙烯亚胺（PEI）掺杂进一步改善了OFET的性能，显着提高了场效应迁移率，分别达到（最大）0.51、0.34和0.26 cm 2 V –1 s –1。特别是用4F掺杂的NDI-T-4FP-T通过空穴电流的耗尽表现出单极n沟道行为。
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