Crystal growth and piezoelectric characterization of mechanically stable ZnO nanostructure arrays†,CrystEngComm

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Crystal growth and piezoelectric characterization of mechanically stable ZnO nanostructure arrays†
CrystEngComm ( IF 2.6 ) Pub Date : 2018-07-16 00:00:00 , DOI: 10.1039/c8ce00799c
T. Lim _{1,

2,

3,

4} , G. Ico _{2,

3,

4,

5} , K. Jung _{1,

2,

3,

4,

6} , K. N. Bozhilov _{2,

3,

4,

7} , J. Nam _{2,

3,

4,

5} , A. A. Martinez-Morales _{1,

2,

3,

4}

Affiliation

The highest piezoelectric performance of ZnO can be achieved by utilizing the piezoelectric operation along the c-axis due to its anisotropic permanent dipole moment. However, a 1-dimensional ZnO crystal is vulnerable to mechanical stress along the c-axis because it is susceptible to breaking. The synthesis of mechanically stable ZnO hexagonal, nanopyramidal arrays is achieved by modulating the premature oxidation of a Zn precursor on a fluorine-doped tin oxide (FTO) substrate during the chemical vapor depositon (CVD) process. The as-synthesized ZnO step-wise nanostructures show a piezoelectric charge coefficient of d₃₃ = 13.20 pm V⁻¹ measured by piezoresponse force microscopy (PFM). Post-synthesis annealing under an oxygen condition improves the piezoelectric response by 98% to a value of d₃₃ = 26.10 pm V⁻¹. The growth mechanism, morphology, crystal structure, and crystal defects are characterized and discussed in this paper.

中文翻译：

机械稳定的ZnO纳米结构阵列的晶体生长和压电特性†

ZnO具有各向异性的永久偶极矩，可通过沿c轴使用压电操作来获得最高的ZnO压电性能。但是，一维ZnO晶体容易受到沿c轴的机械应力的影响，因为它容易破裂。机械稳定的ZnO六角形，金字塔形纳米阵列的合成是通过在化学气相沉积（CVD）过程中调制掺氟氧化锡（FTO）衬底上的Zn前驱体的过早氧化来实现的。刚合成的ZnO逐步纳米结构的压电电荷系数为d ₃₃ = 13.20 pm V ^-1通过压电响应力显微镜（PFM）测量。在氧条件下的合成后退火将压电响应提高了98％，达到d ₃₃ = 26.10 pm V ^-1的值。本文对生长机理，形貌，晶体结构和晶体缺陷进行了表征和讨论。

更新日期：2018-07-16

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