We analyze and compare different aspects of InAs/InAsSb and InAs/GaSb type-II superlattices for infrared detector applications and argue that the former is the most effective when implemented for mid-wavelength infrared detectors. We then report results on an InAs/InAsSb superlattice based mid-wavelength high operating temperature barrier infrared detector. At 150 K, the 50% cutoff wavelength is 5.37 μm, the quantum efficiency at 4.5 μm is ∼52% without anti-reflection coating, the dark current density under −0.2 V bias is 4.5 × 10−5 A/cm2, and the dark-current-limited and the f/2 black-body (300 K background in 3–5 μm band) specific detectivities are 4.6 × 1011 and 3.0 × 1011 cm-Hz1/2/W, respectively. A focal plane array made from the same material exhibits a mean noise equivalent differential temperature of 18.7 mK at 160 K operating temperature with an f/2 optics and a 300 K background, demonstrating significantly higher operating temperature than InSb.

中文翻译：

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中波长高工作温度屏障红外探测器和焦平面阵列

我们分析和比较了 InAs/InAsSb 和 InAs/GaSb II 型超晶格在红外探测器应用中的不同方面，并认为前者在用于中波长红外探测器时最有效。然后，我们报告了基于 InAs/InAsSb 超晶格的中波长高工作温度屏障红外探测器的结果。在 150 K 时，50% 截止波长为 5.37 μm，4.5 μm 处的量子效率为 ∼52%，没有抗反射涂层，-0.2 V 偏压下的暗电流密度为 4.5 × 10-5 A/cm2，并且暗电流限制和 f/2 黑体（3-5 μm 波段中的 300 K 背景）特异性检测率分别为 4.6 × 1011 和 3.0 × 1011 cm-Hz1/2/W。由相同材料制成的焦平面阵列的平均噪声等效温差为 18。