Hf0.5Zr0.5O2 (HZO) films are grown on rigid glass and flexible polyimide substrates using non-rapid thermal annealing. Films are comparatively investigated using macroscopic and local probe-based approaches to characterize their ferroelectric and piezoelectric properties. The polarization-electric field (P-E) measurements reveal that the ferroelectric characteristics of these thin films agree with the observed switchable piezoresponse hysteresis loops as well as electrically written, oppositely oriented domains. Moreover, the HZO thin films grown on flexible polyimide substrates display significantly enhanced piezoelectric response in comparison to the films grown on rigid substrates. This effect is likely due to improved domain wall motion caused by the mechanical release of the film-substrate couple. These findings suggest that inherently lead-free HZO thin films on flexible substrates are potential candidate materials for improved piezoelectric applications in wearable devices.Hf0.5Zr0.5O2 (HZO) films are grown on rigid glass and flexible polyimide substrates using non-rapid thermal annealing. Films are comparatively investigated using macroscopic and local probe-based approaches to characterize their ferroelectric and piezoelectric properties. The polarization-electric field (P-E) measurements reveal that the ferroelectric characteristics of these thin films agree with the observed switchable piezoresponse hysteresis loops as well as electrically written, oppositely oriented domains. Moreover, the HZO thin films grown on flexible polyimide substrates display significantly enhanced piezoelectric response in comparison to the films grown on rigid substrates. This effect is likely due to improved domain wall motion caused by the mechanical release of the film-substrate couple. These findings suggest that inherently lead-free HZO thin films on flexible substrates are potential candidate materials for improved piezoelectric applications in wearable devices.

中文翻译：

---

无机柔性基板增强薄膜氧化铪-氧化锆 (HZO) 的压电性

Hf0.5Zr0.5O2 (HZO) 薄膜使用非快速热退火在刚性玻璃和柔性聚酰亚胺基板上生长。使用基于宏观和局部探针的方法对薄膜进行了比较研究，以表征其铁电和压电特性。极化电场 (PE) 测量表明，这些薄膜的铁电特性与观察到的可切换压电响应磁滞回线以及电写入的相反方向域一致。此外，与在刚性基板上生长的薄膜相比，在柔性聚酰亚胺基板上生长的 HZO 薄膜显示出显着增强的压电响应。这种效应可能是由于膜-衬底对的机械释放引起的畴壁运动的改善。这些发现表明，柔性基板上固有的无铅 HZO 薄膜是改进可穿戴设备压电应用的潜在候选材料。 Hf0.5Zr0.5O2 (HZO) 薄膜使用非快速热退火在刚性玻璃和柔性聚酰亚胺基板上生长. 使用基于宏观和局部探针的方法对薄膜进行了比较研究，以表征其铁电和压电特性。极化电场 (PE) 测量表明，这些薄膜的铁电特性与观察到的可切换压电响应磁滞回线以及电写入的相反方向域一致。而且，与在刚性基板上生长的薄膜相比，在柔性聚酰亚胺基板上生长的 HZO 薄膜显示出显着增强的压电响应。这种效应可能是由于膜-衬底对的机械释放引起的畴壁运动的改善。这些发现表明，柔性基板上固有的无铅 HZO 薄膜是改善可穿戴设备压电应用的潜在候选材料。