In this letter, we report on accurate comparative measurements of Raman scattering from bulk crystalline Si and from hydrogenated amorphous Si thin films before and after their pulse laser annealing, performed for the purpose of Si crystalline grain formation. Being accompanied by the respective optical transmittance/reflectance measurements, these data allowed us to estimate the integrated Raman scattering cross section ratios of crystalline and microcrystalline Si to hydrogenated amorphous Si and to compare the results with those known from the literature. For crystalline Si, the obtained ratio is equal to 0.75, while for microcrystalline Si, it is equal to at least 2. Our results are found to contradict the proposed earlier exponential decay dependence of the integrated Raman scattering cross section ratio of microcrystalline to amorphous Si on the crystalline grain size. The physical reasons, which support our findings, are discussed.In this letter, we report on accurate comparative measurements of Raman scattering from bulk crystalline Si and from hydrogenated amorphous Si thin films before and after their pulse laser annealing, performed for the purpose of Si crystalline grain formation. Being accompanied by the respective optical transmittance/reflectance measurements, these data allowed us to estimate the integrated Raman scattering cross section ratios of crystalline and microcrystalline Si to hydrogenated amorphous Si and to compare the results with those known from the literature. For crystalline Si, the obtained ratio is equal to 0.75, while for microcrystalline Si, it is equal to at least 2. Our results are found to contradict the proposed earlier exponential decay dependence of the integrated Raman scattering cross section ratio of microcrystalline to amorphous Si on the crystalline grain size. The physical reasons, which support our findings, are discussed.

中文翻译：

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关于晶体和微晶与非晶硅的拉曼散射截面比

在这封信中，我们报告了在脉冲激光退火之前和之后对块状结晶 Si 和氢化非晶 Si 薄膜的拉曼散射的准确比较测量，其目的是形成 Si 晶粒。伴随着各自的光学透射率/反射率测量，这些数据使我们能够估计结晶和微晶硅与氢化非晶硅的综合拉曼散射截面比，并将结果与​​文献中已知的结果进行比较。对于结晶硅，得到的比值等于 0.75，而对于微晶硅，它至少等于 2。发现我们的结果与微晶与非晶硅的积分拉曼散射截面比对晶粒尺寸的早期指数衰减依赖性相矛盾。讨论了支持我们发现的物理原因。 在这封信中，我们报告了在脉冲激光退火之前和之后对块状晶体 Si 和氢化非晶 Si 薄膜的拉曼散射的准确比较测量，用于 Si晶粒的形成。伴随着各自的光学透射率/反射率测量，这些数据使我们能够估计结晶和微晶硅与氢化非晶硅的综合拉曼散射截面比，并将结果与​​文献中已知的结果进行比较。对于结晶硅，获得的比率等于 0.75，而对于微晶 Si，它至少等于 2。我们发现我们的结果与先前提出的微晶与非晶 Si 的积分拉曼散射截面比对晶粒的指数衰减依赖性相矛盾尺寸。讨论了支持我们发现的物理原因。