Interdot spin transfer dynamics is studied in a laterally coupled excited spin ensemble of high-density InGaAs quantum dots (QDs). We observe a rise time of the photoluminescence intensity of ∼100 ps and a simultaneous increase in the spin polarization of the excited spin ensemble, indicating spin injection from higher-energy levels in smaller QDs. Moreover, this coupled ensemble exhibits decay properties of the spin polarization that vary with the excited spin density. This phenomenon can be quantitatively understood by considering interdot spin transfer into lower-energy levels of the surrounding QDs, where the transfer rate depends on the degree of state filling of each QD level.Interdot spin transfer dynamics is studied in a laterally coupled excited spin ensemble of high-density InGaAs quantum dots (QDs). We observe a rise time of the photoluminescence intensity of ∼100 ps and a simultaneous increase in the spin polarization of the excited spin ensemble, indicating spin injection from higher-energy levels in smaller QDs. Moreover, this coupled ensemble exhibits decay properties of the spin polarization that vary with the excited spin density. This phenomenon can be quantitatively understood by considering interdot spin transfer into lower-energy levels of the surrounding QDs, where the transfer rate depends on the degree of state filling of each QD level.

中文翻译：

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高密度 InGaAs 量子点横向耦合激发自旋系综中的点间自旋转移动力学

在高密度 InGaAs 量子点 (QD) 的横向耦合激发自旋系综中研究点间自旋转移动力学。我们观察到约 100 ps 的光致发光强度的上升时间和受激自旋系综的自旋极化同时增加，表明来自较小 QD 中较高能级的自旋注入。此外，该耦合系综表现出随激发自旋密度变化的自旋极化衰减特性。这种现象可以通过考虑点间自旋转移到周围量子点的低能级来定量理解，其中转移率取决于每个量子点能级的状态填充程度。 在横向耦合激发自旋系综中研究点间自旋转移动力学高密度 InGaAs 量子点 (QD)。我们观察到约 100 ps 的光致发光强度的上升时间和受激自旋系综的自旋极化同时增加，表明来自较小 QD 中较高能级的自旋注入。此外，该耦合系综表现出随激发自旋密度变化的自旋极化衰减特性。通过将点间自旋转移到周围 QD 的较低能级，可以定量地理解这种现象，其中转移速率取决于每个 QD 能级的状态填充程度。这个耦合系综表现出自旋极化的衰减特性，随激发的自旋密度而变化。通过将点间自旋转移到周围 QD 的较低能级，可以定量地理解这种现象，其中转移速率取决于每个 QD 能级的状态填充程度。这个耦合系综表现出自旋极化的衰减特性，随激发的自旋密度而变化。通过将点间自旋转移到周围 QD 的较低能级，可以定量地理解这种现象，其中转移速率取决于每个 QD 能级的状态填充程度。