Resistive random access memory (RRAM) has attracted significant interest for next-generation nonvolatile memory applications. However, it is somehow difficult to design a high speed RRAM device with enhanced data reliability. This paper deals with the improvement of high speed durable switching in nanocrystals based RRAM (NC-RRAM) devices. The high performance RRAM devices were prepared by incorporating the NCs into the HfOx oxide layer. As compared to the without (w/o) NC devices, the NC-RRAM devices are capable to execute uniform switching with higher set speed of 100 ns and reset speed of 150 ns, longer retention time and higher endurance of 108 cycles at 85 °C. The possible switching mechanism is due to the formation and rupture of the conductive filaments (CFs) inside the oxide film. The improvement of the NC-RRAM devices is due to the enhanced electric field intensity on the surface of the NCs, which can effectively facilitate the formation and rupture of the CFs.

中文翻译：

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通过在基于 HfOx 的电阻式随机存取存储器件中加入纳米晶体来提高耐用性和开关速度

电阻式随机存取存储器 (RRAM) 引起了下一代非易失性存储器应用的极大兴趣。然而，设计具有增强数据可靠性的高速 RRAM 设备在某种程度上是困难的。本文讨论了基于纳米晶体的 RRAM (NC-RRAM) 设备中高速耐用开关的改进。通过将 NCs 加入 HfOx 氧化物层来制备高性能 RRAM 器件。与无（w/o）NC器件相比，NC-RRAM器件能够以100 ns的更高设置速度和150 ns的复位速度、更长的保留时间和更高的85°下108个周期的耐久性执行均匀切换C。可能的开关机制是由于氧化膜内部导电细丝 (CFs) 的形成和破裂。