An approach to realizing high-voltage, high-current vertical GaN-on-GaN power diodes is reported. We show that by combining a partially compensated ion-implanted edge termination (ET) with sputtered SiNx passivation and optimized ohmic contacts, devices approaching the fundamental material limits of GaN can be achieved. Devices with breakdown voltages (Vbr) of 1.68 kV and differential specific on resistances (Ron) of 0.15 mΩ cm2, corresponding to a Baliga figure of merit of 18.8 GW/cm2, are demonstrated experimentally. The ion-implantation-based ET has been analyzed through numerical simulation and validated by experiment. The use of a partially compensated ET layer, with approximately 40 nm of the p-type anode layer remaining uncompensated by the implant, is found to be optimal for maximizing Vbr. The implant-based ET enhances the breakdown voltage without compromising the forward characteristics. Devices exhibit near-ideal scaling with area, enabling currents as high as 12 A for a 1 mm diameter device.

中文翻译：

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具有部分补偿边缘终端的高电压、高电流 GaN-on-GaN pn 二极管

报道了一种实现高电压、高电流垂直 GaN-on-GaN 功率二极管的方法。我们表明，通过将部分补偿的离子注入边缘终端 (ET) 与溅射 SiNx 钝化和优化的欧姆接触相结合，可以实现接近 GaN 基本材料极限的器件。具有 1.68 kV 击穿电压 (Vbr) 和 0.15 mΩ cm2 的差分特定电阻 (Ron) 的器件，对应于 18.8 GW/cm2 的 Baliga 品质因数，通过实验进行了演示。已经通过数值模拟和实验验证了基于离子注入的ET。发现使用部分补偿的 ET 层，其中大约 40 nm 的 p 型阳极层未被注入补偿，被发现是最大化 Vbr 的最佳选择。基于注入的 ET 可在不影响正向特性的情况下提高击穿电压。器件表现出近乎理想的面积缩放，使 1 毫米直径器件的电流高达 12 A。