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Efficient Photocarrier Transfer and Effective Photoluminescence Enhancement in Type I Monolayer MoTe2/WSe2 Heterostructure
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2018-07-13 , DOI: 10.1002/adfm.201801021 Takao Yamaoka 1 , Hong En Lim 1 , Sandhaya Koirala 1 , Xiaofan Wang 1 , Keisuke Shinokita 1 , Mina Maruyama 2 , Susumu Okada 2 , Yuhei Miyauchi 1 , Kazunari Matsuda 1
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2018-07-13 , DOI: 10.1002/adfm.201801021 Takao Yamaoka 1 , Hong En Lim 1 , Sandhaya Koirala 1 , Xiaofan Wang 1 , Keisuke Shinokita 1 , Mina Maruyama 2 , Susumu Okada 2 , Yuhei Miyauchi 1 , Kazunari Matsuda 1
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Artificial van der Waals heterostructures of 2D layered materials are attractive from the viewpoint of the possible discovery of new physics together with improved functionalities. Stacking various combinations of atomically thin semiconducting transition metal dichalcogenides, MX2 (M = Mo, W; X = S, Se, Te) with a hexagonal crystal structure, typically leads to the formation of a staggered Type II band alignment in the heterostructure, where electrons and holes are confined in different layers. Here, the comprehensive studies are performed on heterostructures prepared from monolayers of WSe2 and MoTe2 using differential reflectance, photoluminescence (PL), and PL excitation spectroscopy. The MoTe2/WSe2 heterostructure shows strong PL from the MoTe2 layer at ≈1.1 eV, which is different from the quenched PL from the WSe2 layer. Moreover, enhancement of PL intensity from the MoTe2 layer is observed because of the near‐unity highly efficient photocarrier transfer from WSe2 to MoTe2. These experimental results suggest that the MoTe2/WSe2 heterostructure has a Type I band alignment where electrons and holes are confined in the MoTe2 layer. The findings extend the diversity and usefulness of ultrathin layered heterostructures based on transition metal dichalcogenides, leading to possibilities toward future optoelectronic applications.
中文翻译：
I型单层MoTe2 / WSe2异质结构中的有效光载流子转移和有效的光致发光增强
从可能发现新物理学以及改进功能的观点出发，二维层状材料的人工范德华力异质结构是有吸引力的。堆叠原子级薄的半导体过渡金属二硫属化物，MX的各种组合2（M =钼，钨; X = S，硒，碲）具有六方晶体结构，典型地导致的形成在所述异质结构交错II型能带排列，电子和空穴被限制在不同的层中。在这里，使用差示反射率，光致发光（PL）和PL激发光谱对由WSe 2和MoTe 2单层制备的异质结构进行了全面研究。MoTe 2 / WSe 2异质结构显示来自MoTe 2层的强PL约为1.1 eV，这不同于来自WSe 2层的淬灭PL 。此外，由于从WSe 2到MoTe 2的近统一高效光载流子传输，可以观察到MoTe 2层的PL强度增强。这些实验结果表明，MoTe 2 / WSe 2异质结构具有I型能带排列，其中电子和空穴被限制在MoTe 2层中。这些发现扩展了基于过渡金属二卤化物的超薄层异质结构的多样性和实用性，从而为未来的光电应用提供了可能性。
更新日期：2018-07-13
中文翻译：
I型单层MoTe2 / WSe2异质结构中的有效光载流子转移和有效的光致发光增强
从可能发现新物理学以及改进功能的观点出发，二维层状材料的人工范德华力异质结构是有吸引力的。堆叠原子级薄的半导体过渡金属二硫属化物，MX的各种组合2（M =钼，钨; X = S，硒，碲）具有六方晶体结构，典型地导致的形成在所述异质结构交错II型能带排列，电子和空穴被限制在不同的层中。在这里，使用差示反射率，光致发光（PL）和PL激发光谱对由WSe 2和MoTe 2单层制备的异质结构进行了全面研究。MoTe 2 / WSe 2异质结构显示来自MoTe 2层的强PL约为1.1 eV，这不同于来自WSe 2层的淬灭PL 。此外，由于从WSe 2到MoTe 2的近统一高效光载流子传输，可以观察到MoTe 2层的PL强度增强。这些实验结果表明，MoTe 2 / WSe 2异质结构具有I型能带排列，其中电子和空穴被限制在MoTe 2层中。这些发现扩展了基于过渡金属二卤化物的超薄层异质结构的多样性和实用性，从而为未来的光电应用提供了可能性。
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