One Million Percent Tunnel Magnetoresistance in a Magnetic van der Waals Heterostructure,Nano Letters

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One Million Percent Tunnel Magnetoresistance in a Magnetic van der Waals Heterostructure
Nano Letters ( IF 9.6 ) Pub Date : 2018-07-12 00:00:00 , DOI: 10.1021/acs.nanolett.8b01552
Hyun Ho Kim _{1,

2} , Bowen Yang _{1,

3} , Tarun Patel _{1,

3} , Francois Sfigakis _{1,

2} , Chenghe Li ₄ , Shangjie Tian ₄ , Hechang Lei ₄ , Adam W. Tsen _{1,

2}

Affiliation

We report the observation of a very large negative magnetoresistance effect in a van der Waals tunnel junction incorporating a thin magnetic semiconductor, CrI₃, as the active layer. At constant voltage bias, current increases by nearly one million percent upon application of a 2 T field. The effect arises from a change between antiparallel to parallel alignment of spins across the different CrI₃ layers. Our results elucidate the nature of the magnetic state in ultrathin CrI₃ and present new opportunities for spintronics based on two-dimensional materials.

中文翻译：

范德华磁性异质结构中的隧道磁阻百分数

我们报告观察到非常大的负磁致电阻效应在结合了薄磁性半导体CrI ₃的Van der Waals隧道结中作为有源层。在恒定电压偏置下，施加2 T电场后电流将增加近一百万％。该效果来自跨越不同CrI ₃层的自旋的反平行对齐与平行对齐之间的变化。我们的结果阐明了超薄CrI _3中磁态的性质，并为基于二维材料的自旋电子学提供了新的机遇。

更新日期：2018-07-12

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