A Pb(Zr,Ti)O₃ (PZT) seed layer without Pb‐deficient defective areas was developed to improve the dielectric breakdown strength and lifetime of thin film piezoelectric actuators. The proportion of defective area in the seed layers was reduced by adjusting the amount of Pb excess in the solution, combined with implementation of a dense, large‐grained (>200 nm) Pt bottom electrode. The optimal Pb excess amount in the solution was about 20 at%; seeding was improved when a slightly Ti‐rich composition (relative to the morphotropic phase boundary) was utilized. It was found that the dielectric breakdown strength and lifetime of PZT films improved as the proportion of visible defective area on the PZT seed layer decreased. Dielectric breakdown strength increased from approximately 300 kV/cm to about 1 MV/cm. The lifetime, characterized by highly accelerated lifetime testing, was increased 60 times by reducing the fraction of defective area. The activation energy (E_a) and voltage acceleration factor (N) for failure of devices (eg, patterned PZT films) were 1.12 ± 0.03 eV and 4.24 ± 0.07 respectively.

中文翻译：

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通过种子的微结构控制来提高掺铌锆钛酸铅钛薄膜的可靠性和介电击穿强度

铅（Zr，Ti）O ₃（PZT）无铅缺陷区域的种子层的开发旨在提高薄膜压电致动器的绝缘击穿强度和寿命。通过调整溶液中过量的Pb量并结合使用致密的大颗粒（> 200 nm）Pt底部电极，可以减少种子层中缺陷区域的比例。溶液中最佳的Pb过量量约为20 at％；当使用稍微富钛的成分（相对于同晶相边界）时，可以改善播种。发现随着PZT种子层上可见缺陷区域的比例减小，PZT膜的介电击穿强度和寿命提高。介电击穿强度从大约300 kV / cm增加到大约1 MV / cm。一生 其特点是通过高度加速的寿命测试，减少了缺陷区域的比例，从而提高了60倍。活化能（E _a）和器件（例如，图案化的PZT膜）失效的电压加速因子（N）分别为1.12±0.03 eV和4.24±0.07。