Abstract MnSb layers have been grown on In x Ga 1 - x As(1 1 1) A virtual substrates using molecular beam epitaxy (MBE). The effects of both substrate temperature ( T sub ) and Sb/Mn beam flux ratio ( J Sb / Mn ) were investigated. The surface morphology, layer and interface structural quality, and magnetic properties have been studied for a 3 × 3 grid of T sub and J Sb / Mn values. Compared to known optimal MBE conditions for MnSb/GaAs(1 1 1) [ T sub = 415 ° C , J Sb / Mn = 6.5], a lower substrate temperature is required for sharp interface formation when growing MnSb on In0.48Ga0.52As(1 1 1) A [ T sub = 350 ° C , J Sb / Mn = 6.5]. At high flux ratio ( J Sb / Mn = 9.5) elemental Sb is readily incorporated into MnSb films. At higher substrate temperatures and lower flux ratios, (In,Ga) Sb inclusions in the MnSb are formed, as well as MnAs inclusions within the substrate. The Sb and (In,Ga) Sb inclusions are epitaxial, while MnAs inclusions are endotaxial, i.e. all have a crytallographic relationship to the substrate and epilayer. MBE optimisation towards different device structures is discussed along with results from a two-stage growth scheme.

中文翻译：

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MnSb(0001)/InGaAs(111)A外延薄膜的生长和表征

摘要 MnSb 层已使用分子束外延 (MBE) 在 In x Ga 1 - x As(1 1 1) A 虚拟衬底上生长。研究了衬底温度 ( T sub ) 和 Sb/Mn 束流比 ( J Sb / Mn ) 的影响。已经研究了 T sub 和 J Sb / Mn 值的 3 × 3 网格的表面形态、层和界面结构质量以及磁性。与 MnSb/GaAs(1 1 1) [T sub = 415 °C，J Sb / Mn = 6.5] 的已知最佳 MBE 条件相比，在 In0.48Ga0.52As 上生长 MnSb 时，需要较低的衬底温度才能形成清晰的界面(1 1 1) A [ T sub = 350 °C , J Sb / Mn = 6.5]。在高通量比 (J Sb / Mn = 9.5) 下，元素 Sb 很容易结合到 MnSb 薄膜中。在较高的衬底温度和较低的通量比下，MnSb 中会形成 (In,Ga) Sb 夹杂物，以及基材内的 MnAs 夹杂物。Sb 和 (In,Ga) Sb 夹杂物是外延的，而 MnAs 夹杂物是内延的，即都与衬底和外延层具有晶体学关系。讨论了针对不同器件结构的 MBE 优化以及两阶段生长方案的结果。