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High Hall Mobility P‐type Cu2SnS3‐Ga2O3 with a High Work Function
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2018-07-12 , DOI: 10.1002/adfm.201802941 Jeonggi Kim 1 , Hyo-Min Kim 1 , Sinyoung Cho 1 , Christophe Avis 1 , Jin Jang 1
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2018-07-12 , DOI: 10.1002/adfm.201802941 Jeonggi Kim 1 , Hyo-Min Kim 1 , Sinyoung Cho 1 , Christophe Avis 1 , Jin Jang 1
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A new transparent p‐type oxide semiconductor (POS) is reported, Cu2SnS3‐Ga2O3, having high Hall mobility of 36.22 cm2 V−1s−1, and high work function of 5.17 eV. The existence of Cu2SnS3 and Ga2O3 phases in the film is confirmed by X‐ray photoelectron spectroscopy results and the Cu2SnS3 shows polycrystalline structure according to Raman spectrum and X‐ray diffraction analysis. The transparent Cu2SnS3‐Ga2O3 exhibits the carrier concentration of 5.86 × 1016 cm−3, and electrical resistivity of 1.94 Ω·cm. The transparent POS is applied to green quantum light‐emitting diodes (QLEDs) as a hole injection layer (HIL) because of its high work function. The QLED exhibits the maximum current efficiency of 51.72 cd A−1, power efficiency of 31.97 lm W−1, and external quantum efficiency (EQE) of 14.93%, which are much higher than the QLED using polyethylene dioxythophene:poly(styrenesulfonate) HIL exhibiting current efficiency of 42.66 cd A−1, power efficiency of 20.33 lm W−1, and EQE of 12.36%. The Cu2SnS3‐Ga2O3 developed in this work can be widely used as a transparent and conductive p‐type oxide for thin‐film devices.
中文翻译：
具有高功函的高霍尔迁移率P型Cu2SnS3-Ga2O3
据报道，一种新型的透明p型氧化物半导体（POS）Cu 2 SnS 3 -Ga 2 O 3具有36.22 cm 2 V -1 s -1的高霍尔迁移率和5.17 eV的高功函。X射线光电子能谱结果证实了薄膜中Cu 2 SnS 3和Ga 2 O 3相的存在，根据拉曼光谱和X射线衍射分析，Cu 2 SnS 3显示出多晶结构。透明的Cu 2 SnS 3 -Ga 2 O 3载流子浓度为5.86×10 16 cm -3，电阻率为1.94Ω·cm。透明POS由于具有较高的功函，因此被用作空穴注入层（HIL）的绿色量子发光二极管（QLED）。该QLED的最大电流效率为51.72 cd A -1，功率效率为31.97 lm W -1，外部量子效率（EQE）为14.93％，远高于使用聚乙烯二氧噻吩：聚苯乙烯磺酸盐HIL的QLED。具有42.66 cd A -1的电流效率，20.33 lm W -1的功率效率和12.36％的EQE。Cu 2 SnS 3 -Ga 2 O在这项工作中开发的3可以广泛用作薄膜器件的透明导电p型氧化物。
更新日期：2018-07-12
中文翻译：
具有高功函的高霍尔迁移率P型Cu2SnS3-Ga2O3
据报道，一种新型的透明p型氧化物半导体（POS）Cu 2 SnS 3 -Ga 2 O 3具有36.22 cm 2 V -1 s -1的高霍尔迁移率和5.17 eV的高功函。X射线光电子能谱结果证实了薄膜中Cu 2 SnS 3和Ga 2 O 3相的存在，根据拉曼光谱和X射线衍射分析，Cu 2 SnS 3显示出多晶结构。透明的Cu 2 SnS 3 -Ga 2 O 3载流子浓度为5.86×10 16 cm -3，电阻率为1.94Ω·cm。透明POS由于具有较高的功函，因此被用作空穴注入层（HIL）的绿色量子发光二极管（QLED）。该QLED的最大电流效率为51.72 cd A -1，功率效率为31.97 lm W -1，外部量子效率（EQE）为14.93％，远高于使用聚乙烯二氧噻吩：聚苯乙烯磺酸盐HIL的QLED。具有42.66 cd A -1的电流效率，20.33 lm W -1的功率效率和12.36％的EQE。Cu 2 SnS 3 -Ga 2 O在这项工作中开发的3可以广泛用作薄膜器件的透明导电p型氧化物。
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