High-performance broadband heterojunction photodetectors based on multilayered PtSe2 directly grown on a Si substrate†,Nanoscale

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High-performance broadband heterojunction photodetectors based on multilayered PtSe2 directly grown on a Si substrate†
Nanoscale ( IF 5.8 ) Pub Date : 2018-07-12 00:00:00 , DOI: 10.1039/c8nr04004d
Chao Xie _{1,

2,

3,

4,

5} , Longhui Zeng _{4,

6,

7,

8} , Zhixiang Zhang _{1,

2,

3,

4} , Yuen-Hong Tsang _{4,

6,

7,

8} , Linbao Luo _{1,

2,

3,

4} , Jung-Ho Lee _{5,

9,

10,

11}

Affiliation

Two-dimensional group-10 transition metal dichalcogenides have recently attracted increasing research interest because of their unique electronic and optoelectronic properties. Herein, we present vertical hybrid heterojunctions of multilayered PtSe₂ and Si, which take advantage of large-scale homogeneous PtSe₂ films grown directly on Si substrates. These heterojunctions show obvious rectifying behavior and a pronounced photovoltaic effect, enabling them to function as self-driven photodetectors operating at zero bias. The photodetectors can operate in both photovoltage and photocurrent modes, with responsivity values as high as 5.26 × 10⁶ V W⁻¹ and 520 mA W⁻¹ at 808 nm, respectively. The I_light/I_dark ratio, specific detectivity, and response speed are 1.5 × 10⁵, 3.26 × 10¹³ Jones, and 55.3/170.5 μs, respectively. Furthermore, the heterojunctions are highly sensitive in a broad spectral region ranging from deep ultraviolet to near-infrared (NIR) (200–1550 nm). Because of the strong NIR light absorption of PtSe₂, the heterojunctions exhibit photocurrent responsivities of 33.25 and 0.57 mA W⁻¹ at telecommunication wavelengths of 1310 and 1550 nm, respectively. Considering the excellent performance of the PtSe₂/Si heterojunctions, they are highly suitable for application in high-performance broadband photodetectors. The generality of the above results also signifies that the proposed in situ synthesis method has great potential for future large-scale optoelectronic device integration.

中文翻译：

基于直接在Si衬底上生长的多层PtSe ₂的高性能宽带异质结光电探测器†

二维10族过渡金属二卤化物由于其独特的电子和光电特性，最近引起了越来越多的研究兴趣。在这里，我们介绍了多层PtSe ₂和Si的垂直杂化异质结，它们利用了直接在Si衬底上生长的大规模均匀PtSe ₂膜的优势。这些异质结表现出明显的整流行为和明显的光电效应，使其能够在零偏压下用作自驱动光电探测器。光电探测器可以在光电压和光电流两种模式下工作，在808 nm处的响应度分别高达5.26×10 ⁶ VW ^-1和520 mA W ^-1。在我_光/我_暗比，比探测，和响应速度是1.5×10⁵，3.26×10个^13个Jones和55.3 / 170.5微秒，分别。此外，异质结在从深紫外线到近红外（NIR）（200-1550 nm）的宽光谱区域内都非常敏感。由于PtSe₂对NIR的强光吸收，异质结在1310和1550 nm的电信波长处分别表现出33.25和0.57 mA W^-1的光电流响应。考虑到PtSe₂的出色性能/ Si异质结，非常适合应用于高性能宽带光电探测器。上述结果的普遍性也表明，所提出的原位合成方法对于未来的大规模光电器件集成具有巨大的潜力。

更新日期：2018-07-12

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