The modification of nitrogen configurations is a viable way to control the electronic properties of nitrogen-doped single-walled carbon nanotubes (N-doped SWCNTs). N-doped SWCNTs were synthesized by a conventional chemical vapor deposition process with a mixed carbon/nitrogen (C/N) feedstock. While higher feedstock flow rates promote the formation of encapsulated N₂ molecules, lower flow rates show a predominance of pyridinic and graphitic nitrogen structures as revealed by X-ray photoemission spectroscopy. Therefore, the nitrogen doping in the sp² carbon network can be controlled by the flow rate of the C/N feedstock.

中文翻译：

---

CVD工艺中掺杂氮的单壁碳纳米管的取决于原料的氮构型†

氮构型的改变是控制氮掺杂单壁碳纳米管（N掺杂SWCNT）电子性能的可行方法。通过常规的化学气相沉积工艺，用碳/氮（C / N）混合原料合成N掺杂的SWCNT。尽管较高的原料流速促进了包封的N ₂分子的形成，但较低的流速却显示出吡啶和石墨氮结构占主导地位，如X射线光电子能谱所揭示的那样。因此，可以通过C / N原料的流量来控制sp ²碳网络中的氮掺杂。