Ballistic One-Dimensional Holes with Strong g-Factor Anisotropy in Germanium,Nano Letters

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Ballistic One-Dimensional Holes with Strong g-Factor Anisotropy in Germanium
Nano Letters ( IF 9.6 ) Pub Date : 2018-07-11 00:00:00 , DOI: 10.1021/acs.nanolett.8b01457
R. Mizokuchi ₁ , R. Maurand ₁ , F. Vigneau ₁ , M. Myronov ₂ , S. De Franceschi ₁

Affiliation

We report experimental evidence of ballistic hole transport in one-dimensional quantum wires gate-defined in a strained SiGe/Ge/SiGe quantum well. At zero magnetic field, we observe conductance plateaus at integer multiples of 2e²/h. At finite magnetic field, the splitting of these plateaus by Zeeman effect reveals largely anisotropic g-factors with absolute values below 1 in the quantum-well plane, and exceeding 10 out-of-plane. This g-factor anisotropy is consistent with a heavy-hole character of the propagating valence-band states, which is in line with a predominant confinement in the growth direction. Remarkably, we observe quantized ballistic conductance in device channels up to 600 nm long. These findings mark an important step toward the realization of novel devices for applications in quantum spintronics.

中文翻译：

锗中具有强g各向异性的弹道一维孔

我们报告了在应变SiGe / Ge / SiGe量子阱中门定义的一维量子线中弹道空穴传输的实验证据。在零磁场下，我们观察到2 e ² / h的整数倍的电导平稳期。在有限的磁场下，通过Zeeman效应将这些平台分裂，显示出各向异性很大的g因子，其绝对值在量子阱平面内小于1，在平面外超过10。这克因子各向异性与传播的价带态的重空穴特征一致，这与在生长方向上的主要限制相一致。值得注意的是，我们观察到长达600 nm的器件通道中的量化弹道电导。这些发现标志着实现用于量子自旋电子学的新型器件迈出了重要的一步。

更新日期：2018-07-11

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