Ultrascaled Germanium Nanowires for Highly Sensitive Photodetection at the Quantum Ballistic Limit,Nano Letters

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Ultrascaled Germanium Nanowires for Highly Sensitive Photodetection at the Quantum Ballistic Limit
Nano Letters ( IF 9.6 ) Pub Date : 2018-07-11 00:00:00 , DOI: 10.1021/acs.nanolett.8b01845
Philipp Staudinger ₁ , Masiar Sistani ₁ , Johannes Greil ₁ , Emmerich Bertagnolli ₁ , Alois Lugstein ₁

Affiliation

We report an experimental study on quasi-one-dimensional Al–Ge–Al nanowire (NW) heterostructures featuring unmatched photoconductive gains exceeding 10⁷ and responsivities as high as 10 A/μW in the visible wavelength regime. Our observations are attributed to the presence of GeO_x related hole-trapping states at the NW surface and can be described by a photogating effect in accordance with previous studies on low-dimensional nanostructures. Utilizing an ultrascaled photodetector device operating in the quantum ballistic transport regime at room temperature we demonstrate for the first time that individual current channels can be addressed directly by laser irradiation. The resulting quantization of the photocurrent represents the ultimate limit of photodetectors, allowing for advanced concepts including highly resolved imaging, light effect transistors and single photon detectors with practically zero off-state current.

中文翻译：

用于量子弹道极限的高灵敏度光电检测的超大规模锗纳米线。

我们报告了关于准一维Al–Ge–Al纳米线（NW）异质结构的实验研究，该结构在可见光波长范围内具有超过10 ^7的无与伦比的光导增益和高达10 A /μW的响应度。我们的观察结果归因于GeO _x的存在NW表面的空穴俘获状态，可以根据先前对低维纳米结构的研究通过光闸效应来描述。利用在室温下以量子弹道传输方式运行的超大规模光电探测器设备，我们首次证明了可以通过激光辐照直接处理单个电流通道。光电流的最终量化代表了光检测器的极限，允许采用高级概念，包括高度分辨的成像，光效应晶体管和具有几乎为零的关态电流的单光子检测器。

更新日期：2018-07-11

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