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Dirac Semimetal Heterostructures: 3D Cd3As2 on 2D Graphene
Advanced Materials ( IF 27.4 ) Pub Date : 2018-07-11 , DOI: 10.1002/adma.201707547 Yan-Fei Wu 1, 2 , Liang Zhang 3 , Cai-Zhen Li 3 , Zhen-Sheng Zhang 1, 2 , Song Liu 1, 2 , Zhi-Min Liao 3, 4 , Dapeng Yu 1, 2
Advanced Materials ( IF 27.4 ) Pub Date : 2018-07-11 , DOI: 10.1002/adma.201707547 Yan-Fei Wu 1, 2 , Liang Zhang 3 , Cai-Zhen Li 3 , Zhen-Sheng Zhang 1, 2 , Song Liu 1, 2 , Zhi-Min Liao 3, 4 , Dapeng Yu 1, 2
Affiliation
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Dirac semimetal is an emerging class of quantum matters, ranging from 2D category, such as, graphene and surface states of topological insulator to 3D category, for instance, Cd3As2 and Na3Bi. As 3D Dirac semimetals typically possess Fermi‐arc surface states, the 2D–3D Dirac van der Waals heterostructures should be promising for future electronics. Here, graphene–Cd3As2 heterostructures are fabricated through direct layer‐by‐layer stacking. The electronic coupling results in a notable interlayer charge transfer, which enables us to modulate the Fermi level of graphene through Cd3As2. A planar graphene p–n–p junction is achieved by selective modification, which demonstrates quantized conductance plateaus. Moreover, compared with the bare graphene device, the graphene–Cd3As2 hybrid device presents large nonlocal signals near the Dirac point due to the charge transfer from the spin‐polarized surface states in the adjacent Cd3As2. The results enrich the family of van der Waals heterostructure and should inspire more studies on the application of Dirac/Weyl semimetals in spintronics.
中文翻译：
狄拉克半金属异质结构：2D 石墨烯上的 3D Cd3As2
狄拉克半金属是一类新兴的量子物质，范围从石墨烯和拓扑绝缘体表面态等2D类别到Cd 3 As 2和Na 3 Bi等3D类别。由于 3D 狄拉克半金属通常具有费米弧表面态，因此 2D-3D 狄拉克范德华异质结构应该有望用于未来的电子产品。在这里，石墨烯-Cd 3 As 2异质结构是通过直接逐层堆叠制造的。电子耦合导致显着的层间电荷转移，这使我们能够通过 Cd 3 As 2调节石墨烯的费米能级。平面石墨烯 p-n-p 结是通过选择性修饰实现的，这表现出了量子化电导平台。此外，与裸石墨烯器件相比，由于相邻Cd 3 As 2中自旋极化表面态的电荷转移，石墨烯-Cd 3 As 2混合器件在狄拉克点附近呈现出较大的非局域信号。这些结果丰富了范德华异质结构家族，并应该激发更多关于狄拉克/韦尔半金属在自旋电子学中应用的研究。
更新日期：2018-07-11
中文翻译：
狄拉克半金属异质结构：2D 石墨烯上的 3D Cd3As2
狄拉克半金属是一类新兴的量子物质，范围从石墨烯和拓扑绝缘体表面态等2D类别到Cd 3 As 2和Na 3 Bi等3D类别。由于 3D 狄拉克半金属通常具有费米弧表面态，因此 2D-3D 狄拉克范德华异质结构应该有望用于未来的电子产品。在这里，石墨烯-Cd 3 As 2异质结构是通过直接逐层堆叠制造的。电子耦合导致显着的层间电荷转移，这使我们能够通过 Cd 3 As 2调节石墨烯的费米能级。平面石墨烯 p-n-p 结是通过选择性修饰实现的，这表现出了量子化电导平台。此外，与裸石墨烯器件相比，由于相邻Cd 3 As 2中自旋极化表面态的电荷转移，石墨烯-Cd 3 As 2混合器件在狄拉克点附近呈现出较大的非局域信号。这些结果丰富了范德华异质结构家族，并应该激发更多关于狄拉克/韦尔半金属在自旋电子学中应用的研究。
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