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Dirac Semimetal Heterostructures: 3D Cd3As2 on 2D Graphene
Advanced Materials ( IF 29.4 ) Pub Date : 2018-07-11 , DOI: 10.1002/adma.201707547
Yan-Fei Wu 1, 2 , Liang Zhang 3 , Cai-Zhen Li 3 , Zhen-Sheng Zhang 1, 2 , Song Liu 1, 2 , Zhi-Min Liao 3, 4 , Dapeng Yu 1, 2
Affiliation  

Dirac semimetal is an emerging class of quantum matters, ranging from 2D category, such as, graphene and surface states of topological insulator to 3D category, for instance, Cd3As2 and Na3Bi. As 3D Dirac semimetals typically possess Fermi‐arc surface states, the 2D–3D Dirac van der Waals heterostructures should be promising for future electronics. Here, graphene–Cd3As2 heterostructures are fabricated through direct layer‐by‐layer stacking. The electronic coupling results in a notable interlayer charge transfer, which enables us to modulate the Fermi level of graphene through Cd3As2. A planar graphene p–n–p junction is achieved by selective modification, which demonstrates quantized conductance plateaus. Moreover, compared with the bare graphene device, the graphene–Cd3As2 hybrid device presents large nonlocal signals near the Dirac point due to the charge transfer from the spin‐polarized surface states in the adjacent Cd3As2. The results enrich the family of van der Waals heterostructure and should inspire more studies on the application of Dirac/Weyl semimetals in spintronics.

中文翻译:

Dirac半金属异质结构:2D石墨烯上的3D Cd3As2

狄拉克半金属是一种新兴的量子物质,其范围从2D类(例如石墨烯和拓扑绝缘体的表面状态)到3D类(例如Cd 3 As 2和Na 3 Bi)。由于3D Dirac半金属通常具有费米弧形表面状态,因此2D–3D Dirac van der Waals异质结构对于未来的电子产品应该很有前途。在这里,石墨烯-Cd 3 As 2异质结构是通过直接逐层堆叠而制成的。电子耦合导致显着的层间电荷转移,这使我们能够通过Cd 3 As 2来调节石墨烯的费米能级。通过选择性修饰实现了平面石墨烯p–n–p结,这表明了量化的电导平台。此外,与裸石墨烯器件相比,由于邻近Cd 3 As 2中自旋极化表面态的电荷转移,石墨烯-Cd 3 As 2杂化器件在狄拉克点附近呈现出较大的非局部信号。研究结果丰富了范德华异质结构家族,应该激发更多关于Dirac / Weyl半金属在自旋电子学中的应用的研究。
更新日期:2018-07-11
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