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Enhancing the Performance of the Half Tin and Half Lead Perovskite Solar Cells by Suppression of the Bulk and Interfacial Charge Recombination
Advanced Materials ( IF 29.4 ) Pub Date : 2018-07-10 , DOI: 10.1002/adma.201803703
Shuyan Shao 1 , Yong Cui 2 , Herman Duim 1 , Xinkai Qiu 3, 4 , Jingjin Dong 5 , Gert H. ten Brink 6 , Giuseppe Portale 5 , Ryan C. Chiechi 3, 4 , Shaoqing Zhang 2 , Jianhui Hou 2 , Maria Antonietta Loi 1
Affiliation  

In this article it is investigated how the hole extraction layer (HEL) influence the charge recombination and performance in half tin and half lead (FASn0.5Pb0.5I3) based solar cells (HPSCs). FASn0.5Pb0.5I3 film grown on PEDOT:PSS displays a large number of pin‐holes and open grain boundaries, resulting in a high defect density and shunts in the perovskite film causing significant bulk and interfacial charge recombination in the HPSCs. By contrast, FASn0.5Pb0.5I3 films grown on PCP‐Na, an anionic conjugated polymer, show compact and pin‐hole free morphology over a large area, which effectively eliminates the shunts and trap states. Moreover, PCP‐Na is characterized by a higher work function, which determines a favorable energy alignment at the anode interface, enhancing the charge extraction. Consequently, both the interfacial and bulk charge recombination in devices using PCP‐Na HEL are considerably reduced giving rise to an overall improvement of all the device parameters. The HPSCs fabricated with this HEL display power conversion efficiency up to 16.27%, which is 40% higher than the efficiency of the control devices using PEDOT:PSS HEL (11.60%). Furthermore, PCP‐Na as HEL offers superior performance in larger area devices compared to PEDOT:PSS.

中文翻译:

通过抑制大体积和界面电荷复合来提高半锡和半铅钙钛矿型太阳能电池的性能

本文研究了空穴提取层(HEL)如何影响基于半锡和半铅(FASn 0.5 Pb 0.5 I 3)的太阳能电池(HPSC)的电荷复合和性能。在PEDOT:PSS上生长的FASn 0.5 Pb 0.5 I 3膜显示出大量的针孔和开放的晶界,从而导致高缺陷密度和钙钛矿膜中的分流,从而导致HPSC中大量的体积和界面电荷复合。相比之下,FASn 0.5 Pb 0.5 I 3在阴离子共轭聚合物PCP-Na上生长的薄膜在大面积上显示致密且无针孔的形态,从而有效消除了分流和陷阱状态。此外,PCP-Na具有较高的功函,可确定阳极界面处有利的能量排列,从而增强电荷提取。因此,使用PCP-Na HEL的设备中的界面电荷和大量电荷重组都大大减少,从而全面改善了所有设备参数。使用此HEL制造的HPSC的功率转换效率高达16.27%,比使用PEDOT:PSS HEL的控制设备的效率(11.60%)高40%。此外,与PEDOT:PSS相比,PCP-Na as HEL在较大面积的设备中提供了卓越的性能。
更新日期:2018-07-10
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