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Tunable Low Loss 1D Surface Plasmons in InAs Nanowires
Advanced Materials ( IF 27.4 ) Pub Date : 2018-07-10 , DOI: 10.1002/adma.201802551 Yixi Zhou 1, 2 , Runkun Chen 1, 2 , Jingyun Wang 3 , Yisheng Huang 3 , Ming Li 3 , Yingjie Xing 3 , Jiahua Duan 1, 2 , Jianjun Chen 1, 2, 4 , James D. Farrell 5 , H. Q. Xu 3, 6 , Jianing Chen 7
Advanced Materials ( IF 27.4 ) Pub Date : 2018-07-10 , DOI: 10.1002/adma.201802551 Yixi Zhou 1, 2 , Runkun Chen 1, 2 , Jingyun Wang 3 , Yisheng Huang 3 , Ming Li 3 , Yingjie Xing 3 , Jiahua Duan 1, 2 , Jianjun Chen 1, 2, 4 , James D. Farrell 5 , H. Q. Xu 3, 6 , Jianing Chen 7
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Due to the ability to manipulate photons at nanoscale, plasmonics has become one of the most important branches in nanophotonics. The prerequisites for the technological application of plasmons include high confining ability (λ0/λp), low damping, and easy tunability. However, plasmons in typical plasmonic materials, i.e., noble metals, cannot satisfy these three requirements simultaneously and cause a disconnection to modern electronics. Here, the indium arsenide (InAs) nanowire is identified as a material that satisfies all the three prerequisites, providing a natural analogy with modern electronics. The dispersion relation of InAs plasmons is determined using the nanoinfrared imaging technique, and show that their associated wavelengths and damping ratio can be tuned by altering the nanowire diameter and dielectric environment. The InAs plasmons possess advantages such as high confining ability, low loss, and ease of fabrication. The observation of InAs plasmons could enable novel plasmonic circuits for future subwavelength applications.
中文翻译：
InAs纳米线中的可调低损耗一维表面等离激元
由于具有在纳米级上操纵光子的能力，等离激元学已成为纳米光子学中最重要的分支之一。对于等离子体的技术应用的先决条件包括高围能力（λ 0 /λ p），低阻尼和易调谐性。但是，典型的等离激元材料（即贵金属）中的等离激元不能同时满足这三个要求，并导致与现代电子设备的分离。在这里，砷化铟（InAs）纳米线被确定为满足所有三个先决条件的材料，提供了与现代电子产品自然的比喻。InAs等离子体激元的色散关系是使用纳米红外成像技术确定的，表明它们的相关波长和阻尼比可以通过改变纳米线的直径和介电环境来调整。InAs等离子体激元具有局限能力强，损耗低，易于制造等优点。InAs等离子体激元的观察可以为未来的亚波长应用提供新颖的等离子体激元电路。
更新日期：2018-07-10
中文翻译：
InAs纳米线中的可调低损耗一维表面等离激元
由于具有在纳米级上操纵光子的能力，等离激元学已成为纳米光子学中最重要的分支之一。对于等离子体的技术应用的先决条件包括高围能力（λ 0 /λ p），低阻尼和易调谐性。但是，典型的等离激元材料（即贵金属）中的等离激元不能同时满足这三个要求，并导致与现代电子设备的分离。在这里，砷化铟（InAs）纳米线被确定为满足所有三个先决条件的材料，提供了与现代电子产品自然的比喻。InAs等离子体激元的色散关系是使用纳米红外成像技术确定的，表明它们的相关波长和阻尼比可以通过改变纳米线的直径和介电环境来调整。InAs等离子体激元具有局限能力强，损耗低，易于制造等优点。InAs等离子体激元的观察可以为未来的亚波长应用提供新颖的等离子体激元电路。
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