Abstract A visible sensing field effect transistor (FET) with a channel length of 100 nm for individual (6,5) single-walled carbon nanotubes (SWCNTs) is fabricated via a selective sorting method using 9,9-dioctyfluorenyl-2,7-diyl–bipyridine (PFO–BPy) polymer. The FET of the (6,5) SWCNTs shows p-type behavior with hundreds of on-off ratios and on-state conductivity of 50 ± 4.0 (Ω m)−1. In addition, the photocurrent of the FET of the (6,5) SWCNTs in the visible range increases (maximum 200 times at 620 nm) with higher gate voltage. E22 transition and PFO-BPy transition are observed in the FET of the (6,5) SWCNTs without application of a gate voltage. Interestingly, exciton-phonon coupled E22 transition due to gate-doping (p-type), which has been reported in photoluminescence and absorption studies, is expected to occur in the photocurrent of the FET at negatively higher gate voltage (≤−4 V). In addition, the exciton-phonon coupled E22 transition is prominently observable when carrier concentration by gate doping becomes approximately two-hundred sixty times (260 ± 43) larger than carrier concentration without application of a gate voltage. This demonstration would be useful for the development of SWCNT-based visible sensors with gate control in the SWCNT devices.

中文翻译：

---

基于（6,5）单壁碳纳米管的可见传感场效应晶体管光电流中栅极增强激子-声子耦合

摘要 通过使用 9,9-二辛基芴基-2,7-的选择性分选方法制造了用于单个 (6,5) 单壁碳纳米管 (SWCNT) 的沟道长度为 100 nm 的可见光感应场效应晶体管 (FET)。二基-联吡啶（PFO-BPy）聚合物。(6,5) SWCNT 的 FET 显示 p 型行为，具有数百个开关比和 50 ± 4.0 (Ω m)-1 的通态电导率。此外，(6,5) SWCNT 在可见光范围内的 FET 的光电流随着栅极电压的升高而增加（在 620 nm 处最大增加 200 倍）。在未施加栅极电压的 (6,5) SWCNT 的 FET 中观察到 E22 转变和 PFO-BPy 转变。有趣的是，由于栅极掺杂（p 型）引起的激子 - 声子耦合 E22 跃迁，已在光致发光和吸收研究中报道，预计在负较高栅极电压 (≤-4 V) 时 FET 的光电流中发生。此外，当栅极掺杂的载流子浓度比没有施加栅极电压的载流子浓度大大约 260 倍 (260 ± 43) 时，可以明显观察到激子 - 声子耦合的 E22 跃迁。该演示对于开发基于 SWCNT 的可见光传感器以及 SWCNT 器件中的栅极控制很有用。