Field‐Effect Transistors: High Performance p‐ and n‐Type Light‐Emitting Field‐Effect Transistors Employing Thermally Activated Delayed Fluorescence (Adv. Funct. Mater. 28/2018),Advanced Functional Materials

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Field‐Effect Transistors: High Performance p‐ and n‐Type Light‐Emitting Field‐Effect Transistors Employing Thermally Activated Delayed Fluorescence (Adv. Funct. Mater. 28/2018)
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2018-07-09 , DOI: 10.1002/adfm.201870193
Jan Sobus _{1,

2} , Fatima Bencheikh _{3,

4} , Masashi Mamada _{3,

4} , Robert Wawrzinek _{1,

2} , Jean-Charles Ribierre _{3,

4} , Chihaya Adachi _{3,

4,

5} , Shih-Chun Lo _{1,

6} , Ebinazar B. Namdas _{1,

2}

Affiliation

Light‐Emitting Field‐Effect Transistors (LEFETs) are a novel class of optoelectronic devices combining switching and light emission properties in a single material stack. In article number 1800340, Chihaya Adachi, Shih‐Chun Lo, Ebinazar B. Namdas, and co‐workers succeed in constructing the first p‐type and n‐type LEFETs employing TADF organic material. Experimental data is supported by numerical simulation, leading to proper localization of the recombination zone and identification of loss pathways.

中文翻译：

场效应晶体管：采用热激活延迟荧光的高性能p型和n型发光场效应晶体管（Adv。Funct。Mater。28/2018）

发光场效应晶体管（LEFET）是一类新颖的光电器件，在单个材料叠层中结合了开关和发光特性。在编号1800340中，Chihaya Adachi，Shih-Chun Lo，Ebinazar B. Namdas和他的同事成功构建了第一个使用TADF有机材料的p型和n型LEFET。实验数据得到数值模拟的支持，从而导致重组区的正确定位和损失途径的鉴定。

更新日期：2018-07-09

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