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Anelastic and Electromechanical Properties of Doped and Reduced Ceria
Advanced Materials ( IF 27.4 ) Pub Date : 2018-07-08 , DOI: 10.1002/adma.201707455
Ellen Wachtel 1 , Anatoly I. Frenkel 2 , Igor Lubomirsky 1
Affiliation  

Room‐temperature mechanical properties of thin films and ceramics of doped and undoped ceria are reviewed with an emphasis on the anelastic behavior of the material. Notably, the unrelaxed Young's modulus of Gd‐doped ceria ceramics measured by ultrasonic pulse‐echo techniques is >200 GPa, while the relaxed biaxial modulus, calculated from the stress/strain ratio of thin films, is ≈10 times smaller. Oxygen‐deficient ceria exhibits a number of anelastic effects, such as hysteresis of the lattice parameter, strain‐dependent Poisson's ratio, room‐temperature creep, and nonclassical electrostriction. Methods of measuring these properties are discussed, as well as the applicability of Raman spectroscopy for evaluating strain in thin films of Gd‐doped ceria. Special attention is paid to detection of the time dependence of anelastic effects. Both the practical advantages and disadvantages of anelasticity on the design and stability of microscopic devices dependent on ceria thin films are discussed, and methods of mitigating the latter are suggested, with the aim of providing a cautionary note for materials scientists and engineers designing devices containing thin films or bulk ceria, as well as providing data‐based constraints for theoreticians who are involved in modeling of the unusual electrical and electromechanical properties of undoped and doped ceria.

中文翻译:

掺杂和还原二氧化铈的弹性和机电性能

回顾了掺杂和未掺杂二氧化铈的薄膜和陶瓷的室温机械性能,重点是材料的非弹性行为。值得注意的是,通过超声脉冲回波技术测得的掺Gd的二氧化铈陶瓷的未松弛杨氏模量> 200 GPa,而根据薄膜的应力/应变比计算得出的松弛双轴模量约小10倍。缺氧的二氧化铈表现出许多非弹性效应,例如晶格参数的滞后,应变相关泊松比,室温蠕变和非经典电致伸缩。讨论了测量这些性质的方法,以及拉曼光谱法在评估掺d二氧化铈薄膜中应变的适用性。要特别注意检测弹性效应的时间依赖性。
更新日期:2018-07-08
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