Atomic Layer Deposited TiO2–IrOx Alloy as a Hole Transport Material for Perovskite Solar Cells,Advanced Materials Interfaces

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Atomic Layer Deposited TiO2–IrOx Alloy as a Hole Transport Material for Perovskite Solar Cells
Advanced Materials Interfaces ( IF 4.3 ) Pub Date : 2018-07-08 , DOI: 10.1002/admi.201800191
Wanliang Tan ₁ , Olivia L. Hendricks ₂ , Andrew C. Meng ₁ , Michael R. Braun ₁ , Michael D. McGehee ₁ , Christopher E. D. Chidsey ₂ , Paul C. McIntyre ₁

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The hole transport layer (HTL) is one of the key components in planar perovskite solar cells. This study reports a new kind of HTL fabricated using atomic layer deposition (ALD). By alloying TiO₂ with IrO_x, it is demonstrated that TiO₂, a well‐known electron‐selective contact and electron transport layer in photovoltaic devices, can behave as an HTL with an appropriately high work function. Perovskite Cs_0.17FA_0.83Pb(I_0.83Br_0.17)₃ solar cells including this new hole transport material achieve a power conversion efficiency of 15.8% under AM 1.5G simulated solar irradiation compared to a 14.3% efficiency for otherwise‐identical devices incorporating a more standard NiO HTL layer. These results suggest the promise of transition metal oxide alloys synthesized by ALD as hole contact materials for optoelectronic devices, including advanced photovoltaics.

中文翻译：

原子层沉积的TiO2-IrOx合金作为钙钛矿太阳能电池的空穴传输材料

空穴传输层（HTL）是平面钙钛矿太阳能电池的关键组件之一。这项研究报告了一种使用原子层沉积（ALD）制造的新型HTL。通过将TiO ₂与IrO _x合金化，证明了TiO ₂是光伏器件中众所周知的电子选择性接触和电子传输层，可以作为具有适当高功函数的HTL发挥作用。钙钛矿Cs _0.17 FA _0.83 Pb（I _0.83 Br _0.17）₃包含这种新型空穴传输材料的太阳能电池在AM 1.5G模拟太阳辐射下的功率转换效率为15.8％，而采用相同标准NiO HTL层的器件的效率为14.3％。这些结果表明，由ALD合成的过渡金属氧化物合金有望作为光电子器件（包括高级光伏器件）的空穴接触材料。

更新日期：2018-07-08

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