Moving the heat aside with BAs Thermal management becomes increasingly important as we decrease device size and increase computing power. Engineering materials with high thermal conductivity, such as boron arsenide (BAs), is hard because it is essential to avoid defects and impurities during synthesis, which would stop heat flow. Three different research groups have synthesized BAs with a thermal conductivity around 1000 watts per meter-kelvin: Kang et al., Li et al., and Tian et al. succeeded in synthesizing high-purity BAs with conductivities half that of diamond but more than double that of conventional metals (see the Perspective by Dames). The advance validates the search for high-thermal-conductivity materials and provides a new material that may be more easily integrated into semiconducting devices. Science, this issue p. 575, p. 579, p. 582; see also p. 549 Boron arsenide has an ultrahigh thermal conductivity, making it competitive with diamond for thermal management applications. The high density of heat generated in power electronics and optoelectronic devices is a critical bottleneck in their application. New materials with high thermal conductivity are needed to effectively dissipate heat and thereby enable enhanced performance of power controls, solid-state lighting, communication, and security systems. We report the experimental discovery of high thermal conductivity at room temperature in cubic boron arsenide (BAs) grown through a modified chemical vapor transport technique. The thermal conductivity of BAs, 1000 ± 90 watts per meter per kelvin meter-kelvin, is higher than that of silicon carbide by a factor of 3 and is surpassed only by diamond and the basal-plane value of graphite. This work shows that BAs represents a class of ultrahigh–thermal conductivity materials predicted by a recent theory, and that it may constitute a useful thermal management material for high–power density electronic devices.

中文翻译：

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立方砷化硼晶体的高热导率

随着我们减小设备尺寸并提高计算能力，热管理变得越来越重要。砷化硼 (BA) 等具有高导热性的工程材料很硬，因为在合成过程中必须避免缺陷和杂质，这会阻止热流。三个不同的研究小组合成了热导率约为 1000 瓦/米-开尔文的 BA：Kang 等人、Li 等人和 Tian 等人。成功合成了高纯度 BA，其导电性是金刚石的一半，但是传统金属的两倍以上（参见 Dames 的观点）。这一进展证实了对高导热材料的探索，并提供了一种可以更容易地集成到半导体器件中的新材料。科学，这个问题 p。575 页。579 页。582; 另见第。549 砷化硼具有超高的导热性，使其在热管理应用中可与金刚石相媲美。电力电子和光电设备中产生的高密度热量是其应用的关键瓶颈。需要具有高导热性的新材料来有效散热，从而增强电源控制、固态照明、通信和安全系统的性能。我们报告了通过改进的化学蒸汽传输技术生长的立方砷化硼 (BA) 在室温下具有高导热性的实验发现。BAs的热导率，1000±90瓦/米每开尔文-开尔文，比碳化硅高 3 倍，仅次于金刚石和石墨的基面值。这项工作表明，BAs 代表了最近理论预测的一类超高热导率材料，并且它可能构成用于高功率密度电子设备的有用的热管理材料。