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Measuring carrier injection from amorphous silicon into crystalline silicon using photoluminescence
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2018-07-05 , DOI: 10.1002/pip.3042 A. Paduthol 1 , M.K. Juhl 1 , G. Nogay 2 , P. Löper 2 , T. Trupke 1
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2018-07-05 , DOI: 10.1002/pip.3042 A. Paduthol 1 , M.K. Juhl 1 , G. Nogay 2 , P. Löper 2 , T. Trupke 1
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In devices with intrinsic amorphous silicon layer on a crystalline silicon substrate, the light absorbed in the amorphous layer can be weakly electronically coupled into the silicon base. Such carrier injection has previously been reported from measurements on finished devices containing stacks of intrinsic and doped amorphous silicon layers. Here, we use spectral response of photoluminescence, a contactless approach, to investigate this carrier injection on significantly simpler structures. In such devices, the effect of absorption in the front layer can be measured by the internal quantum efficiency. A highly absorbing front layer is expected to cause a drop in the quantum efficiency at short wavelengths. However, if electron‐hole pairs that are generated in the front layer are subsequently injected into the base, the optical losses will be reduced, resulting in a partial recovery of the quantum efficiency at short wavelengths. Here, we quantify the efficiency of carrier injection from the intrinsic amorphous silicon front layer to the crystalline silicon base, by measuring the spectral response of photoluminescence heterojunction test structures. For devices with just an intrinsic amorphous silicon layer, the carrier injection from the layer was found to be close to unity.
中文翻译：
使用光致发光测量从非晶硅到结晶硅的载流子注入
在晶体硅衬底上具有本征非晶硅层的器件中，在非晶层中吸收的光可以弱电耦合到硅基底中。这种载流子注入先前已经从对包含本征和掺杂的非晶硅层的堆叠的成品器件的测量中报道。在这里，我们使用光致发光的光谱响应（一种非接触方法）来研究这种在简单得多的结构上注入的载流子。在这样的装置中，可以通过内部量子效率来测量在前层中的吸收效应。预期高吸收的前层会在短波长下导致量子效率下降。但是，如果随后将在前层中生成的电子空穴对注入到基极中，光学损失将减少，从而导致短波长处的量子效率部分恢复。在这里，我们通过测量光致发光异质结测试结构的光谱响应来量化从本征非晶硅顶层到晶体硅基层的载流子注入效率。对于仅具有本征非晶硅层的器件，发现从该层注入的载流子接近于一。
更新日期：2018-07-05
中文翻译：
使用光致发光测量从非晶硅到结晶硅的载流子注入
在晶体硅衬底上具有本征非晶硅层的器件中，在非晶层中吸收的光可以弱电耦合到硅基底中。这种载流子注入先前已经从对包含本征和掺杂的非晶硅层的堆叠的成品器件的测量中报道。在这里，我们使用光致发光的光谱响应（一种非接触方法）来研究这种在简单得多的结构上注入的载流子。在这样的装置中，可以通过内部量子效率来测量在前层中的吸收效应。预期高吸收的前层会在短波长下导致量子效率下降。但是，如果随后将在前层中生成的电子空穴对注入到基极中，光学损失将减少，从而导致短波长处的量子效率部分恢复。在这里，我们通过测量光致发光异质结测试结构的光谱响应来量化从本征非晶硅顶层到晶体硅基层的载流子注入效率。对于仅具有本征非晶硅层的器件，发现从该层注入的载流子接近于一。
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