Deep ultraviolet (UV) light-emitting diodes (LEDs) at a wavelength of 226 nm based on AlGaN/AlN multiple quantum wells using p-type Si as both the hole supplier and the reflective layer are demonstrated. In addition to the description of the hole transport mechanism that allows hole injection from p-type Si into the wide bandgap device, the details of the LED structure which take advantage of the p-type Si layer as a reflective layer to enhance light extraction efficiency (LEE) are elaborated. Fabricated LEDs were characterized both electrically and optically. Owing to the efficient hole injection and enhanced LEE using the p-type Si nanomembranes (NMs), an optical output power of 225 μW was observed at 20 mA continuous current operation (equivalent current density of 15 A/cm2) without external thermal management. The corresponding external quantum efficiency is 0.2%, higher than any UV LEDs with emission wavelength below 230 nm in the continuous current drive mode. The study demonstrates that adopting p-type Si NMs as both the hole injector and the reflective mirror can enable high-performance UV LEDs with emission wavelengths, output power levels, and efficiencies that were previously inaccessible using conventional p-i-n structures.Deep ultraviolet (UV) light-emitting diodes (LEDs) at a wavelength of 226 nm based on AlGaN/AlN multiple quantum wells using p-type Si as both the hole supplier and the reflective layer are demonstrated. In addition to the description of the hole transport mechanism that allows hole injection from p-type Si into the wide bandgap device, the details of the LED structure which take advantage of the p-type Si layer as a reflective layer to enhance light extraction efficiency (LEE) are elaborated. Fabricated LEDs were characterized both electrically and optically. Owing to the efficient hole injection and enhanced LEE using the p-type Si nanomembranes (NMs), an optical output power of 225 μW was observed at 20 mA continuous current operation (equivalent current density of 15 A/cm2) without external thermal management. The corresponding external quantum efficiency is 0.2%, higher than any UV LEDs with emission wavelength below 230 nm in the continuous current drive mode. The study demonstrates that adopting p-...

中文翻译：

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226 nm AlGaN/AlN UV LED 使用 p 型 Si 进行空穴注入和 UV 反射

展示了基于 AlGaN/AlN 多量子阱的波长为 226 nm 的深紫外 (UV) 发光二极管 (LED)，使用 p 型 Si 作为空穴供应器和反射层。除了描述允许空穴从 p 型硅注入宽带隙器件的空穴传输机制外，还有利用 p 型硅层作为反射层来提高光提取效率的 LED 结构的细节(LEE) 进行了详细说明。制造的 LED 具有电学和光学特性。由于使用 p 型硅纳米膜 (NMs) 的高效空穴注入和增强的 LEE，在没有外部热管理的 20 mA 连续电流操作（等效电流密度为 15 A/cm2）下观察到 225 μW 的光输出功率。相应的外量子效率为 0.2%，高于任何在连续电流驱动模式下发射波长低于 230 nm 的 UV LED。该研究表明，采用 p 型 Si NMs 作为空穴注入器和反射镜可以实现高性能 UV LED，其具有以前使用传统 pin 结构无法获得的发射波长、输出功率水平和效率。 深紫外 (UV)演示了基于 AlGaN/AlN 多量子阱的波长为 226 nm 的发光二极管 (LED)，使用 p 型 Si 作为空穴供应器和反射层。除了描述允许空穴从 p 型 Si 注入宽带隙器件的空穴传输机制之外，详细阐述了利用 p 型硅层作为反射层来提高光提取效率 (LEE) 的 LED 结构的细节。制造的 LED 具有电学和光学特性。由于使用 p 型硅纳米膜 (NMs) 的高效空穴注入和增强的 LEE，在没有外部热管理的 20 mA 连续电流操作（等效电流密度为 15 A/cm2）下观察到 225 μW 的光输出功率。相应的外量子效率为 0.2%，高于任何在连续电流驱动模式下发射波长低于 230 nm 的 UV LED。该研究表明，采用 p-... 由于使用 p 型硅纳米膜 (NMs) 的高效空穴注入和增强的 LEE，在没有外部热管理的 20 mA 连续电流操作（等效电流密度为 15 A/cm2）下观察到 225 μW 的光输出功率。相应的外量子效率为 0.2%，高于任何在连续电流驱动模式下发射波长低于 230 nm 的 UV LED。该研究表明，采用 p-... 由于使用 p 型硅纳米膜 (NMs) 的高效空穴注入和增强的 LEE，在没有外部热管理的 20 mA 连续电流操作（等效电流密度为 15 A/cm2）下观察到 225 μW 的光输出功率。相应的外量子效率为 0.2%，高于任何在连续电流驱动模式下发射波长低于 230 nm 的 UV LED。该研究表明，采用 p-...