We report the growth of GaAs/GaNAs/GaAs core-multishell nanowires having N compositions exceeding 2%. The structures were grown by plasma-assisted molecular beam epitaxy using constituent Ga-induced vapor-liquid-solid growth on Si(111) substrates. The GaNAs shell nominally contains 0%, 2%, and 3% nitrogen. The axial cross-sectional scanning transmission electron microscopy measurements confirm the existence of core-multishell structure. The room temperature micro-photoluminescence measurements reveal a red-shift of the detected emission with increasing N content in the nanowires, consistent with the expected changes in the GaNAs bandgap energy due to the bowing effect.We report the growth of GaAs/GaNAs/GaAs core-multishell nanowires having N compositions exceeding 2%. The structures were grown by plasma-assisted molecular beam epitaxy using constituent Ga-induced vapor-liquid-solid growth on Si(111) substrates. The GaNAs shell nominally contains 0%, 2%, and 3% nitrogen. The axial cross-sectional scanning transmission electron microscopy measurements confirm the existence of core-multishell structure. The room temperature micro-photoluminescence measurements reveal a red-shift of the detected emission with increasing N content in the nanowires, consistent with the expected changes in the GaNAs bandgap energy due to the bowing effect.

中文翻译：

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含氮成分超过 2% 的 GaAs/GaNAs 核-多壳纳米线

我们报告了 N 成分超过 2% 的 GaAs/GaNAs/GaAs 核-多壳纳米线的生长。这些结构是通过等离子体辅助分子束外延生长的，使用成分 Ga 诱导的汽-液-固生长在 Si(111) 衬底上。GaNAs 壳标称含有 0%、2% 和 3% 的氮。轴向横截面扫描透射电子显微镜测量证实了核-多壳结构的存在。室温微光致发光测量显示，随着纳米线中 N 含量的增加，检测到的发射发生红移，这与由于弓形效应导致的 GaNAs 带隙能量的预期变化一致。 我们报告了 GaAs/GaNAs/GaAs 的生长具有超过 2% 的 N 组成的核-多壳纳米线。这些结构是通过等离子体辅助分子束外延生长的，使用成分 Ga 诱导的汽-液-固生长在 Si(111) 衬底上。GaN 壳标称含有 0%、2% 和 3% 的氮。轴向横截面扫描透射电子显微镜测量证实了核-多壳结构的存在。室温微光致发光测量显示，随着纳米线中 N 含量的增加，检测到的发射发生红移，这与由于弓形效应导致的 GaN 带隙能量的预期变化一致。