Direct observation of stacking fault shrinkage in 4H-SiC at high temperatures by in-situ X-ray topography using monochromatic synchrotron radiation,Applied Physics Letters

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Direct observation of stacking fault shrinkage in 4H-SiC at high temperatures by in-situ X-ray topography using monochromatic synchrotron radiation
Applied Physics Letters ( IF 3.5 ) Pub Date : 2018-07-02 , DOI: 10.1063/1.5038189
Fumihiro Fujie ₁ , Shunta Harada _{1,

2} , Haruhiko Koizumi ₂ , Kenta Murayama ₂ , Kenji Hanada ₃ , Miho Tagawa _{1,

2} , Toru Ujihara _{1,

2,

4}

Affiliation

An in-situ X-ray topography system using monochromatic synchrotron radiation for the observation of the stacking faults in 4H-SiC during a high-temperature annealing process was developed. We demonstrated that the stacking faults in nitrogen-doped 4H-SiC not only expand but also shrink at high temperatures. Furthermore, it was confirmed that the types of the core structure of partial dislocations enclosing the stacking fault can be determined at high temperatures.An in-situ X-ray topography system using monochromatic synchrotron radiation for the observation of the stacking faults in 4H-SiC during a high-temperature annealing process was developed. We demonstrated that the stacking faults in nitrogen-doped 4H-SiC not only expand but also shrink at high temperatures. Furthermore, it was confirmed that the types of the core structure of partial dislocations enclosing the stacking fault can be determined at high temperatures.

中文翻译：

使用单色同步辐射通过原位 X 射线形貌直接观察 4H-SiC 在高温下的堆垛层错收缩

开发了一种使用单色同步辐射的原位 X 射线形貌系统，用于在高温退火过程中观察 4H-SiC 中的堆垛层错。我们证明了氮掺杂的 4H-SiC 中的堆垛层错不仅在高温下膨胀而且收缩。此外，还证实可以在高温下确定包围堆垛层错的部分位错的核心结构类型。使用单色同步辐射的原位 X 射线形貌系统用于观察 4H-SiC 堆垛层错在高温退火过程中开发。我们证明了氮掺杂的 4H-SiC 中的堆垛层错不仅在高温下膨胀而且收缩。此外，

更新日期：2018-07-02

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