The concept of the tricolor superstructure (TCS), which is a triple-layer stack structure containing two types of high dielectric constant (high-k) layers (designated HK1 and HK2) and a SiO2 layer, is proposed to control the moment and the polarity of the interface dipole layer that are induced at the high-k/SiO2 interfaces. The interface dipole layer is formed by oxygen ion migration from the layer with higher oxygen areal density (σ) to that with lower σ. When the two high-k materials are selected with the order of σHK1 > σSiO2 > σHK2 in a SiO2/HK2/HK1/SiO2 TCS, the dipole directions of the interface dipole layers at the SiO2/HK2 and the HK1/SiO2 interfaces are aligned. Additionally, in the transposed SiO2/HK1/HK2/SiO2 TCS, the total polarity is reversed. The concept is demonstrated using Al2O3 and Y2O3 layers because they offer the order of σAl2O3 > σSiO2 > σY2O3. The two stacking sequence samples composed of SiO2/Y2O3/Al2O3/SiO2 and SiO2/Al2O3/Y2O3/SiO2 that were fabricated using superlattice technique by pulsed laser deposition obviously show opposite dipole polarities. Increasing repetition of the deposited TCS unit also causes the dipole moments to increase systematically. The TCS technique enables control of the properties of the interface dipole layer at high-k/SiO2 interfaces in amorphous systems.The concept of the tricolor superstructure (TCS), which is a triple-layer stack structure containing two types of high dielectric constant (high-k) layers (designated HK1 and HK2) and a SiO2 layer, is proposed to control the moment and the polarity of the interface dipole layer that are induced at the high-k/SiO2 interfaces. The interface dipole layer is formed by oxygen ion migration from the layer with higher oxygen areal density (σ) to that with lower σ. When the two high-k materials are selected with the order of σHK1 > σSiO2 > σHK2 in a SiO2/HK2/HK1/SiO2 TCS, the dipole directions of the interface dipole layers at the SiO2/HK2 and the HK1/SiO2 interfaces are aligned. Additionally, in the transposed SiO2/HK1/HK2/SiO2 TCS, the total polarity is reversed. The concept is demonstrated using Al2O3 and Y2O3 layers because they offer the order of σAl2O3 > σSiO2 > σY2O3. The two stacking sequence samples composed of SiO2/Y2O3/Al2O3/SiO2 and SiO2/Al2O3/Y2O3/SiO2 that were fabricated using superlattice techniqu...

中文翻译：

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在具有三色超结构的硅衬底上控制高 k 和 SiO2 叠层的偶极子特性

提出了三色超结构 (TCS) 的概念，它是一种三层堆叠结构，包含两种类型的高介电常数 (high-k) 层（指定为 HK1 和 HK2）和一个 SiO2 层，用于控制力矩和在高 k/SiO2 界面感应的界面偶极子层的极性。界面偶极子层是由氧离子从具有较高氧面密度 (σ) 的层迁移到较低 σ 的层形成的。当在 SiO2/HK2/HK1/SiO2 TCS 中按照 σHK1 > σSiO2 > σHK2 的顺序选择两种高 k 材料时，SiO2/HK2 和 HK1/SiO2 界面处的界面偶极子层的偶极子方向对齐. 此外，在转置的 SiO2/HK1/HK2/SiO2 TCS 中，总极性是相反的。该概念使用 Al2O3 和 Y2O3 层进行演示，因为它们提供了 σAl2O3 > σSiO2 > σY2O3 的顺序。使用超晶格技术通过脉冲激光沉积制备的由SiO2/Y2O3/Al2O3/SiO2和SiO2/Al2O3/Y2O3/SiO2组成的两个堆叠序列样品明显显示出相反的偶极极性。增加沉积的 TCS 单元的重复也会导致偶极矩系统地增加。TCS 技术可以控制非晶系统中高 k/SiO2 界面处的界面偶极子层的特性。 三色超结构 (TCS) 的概念，它是一种三层堆叠结构，包含两种类型的高介电常数 (高k）层（指定为HK1和HK2）和SiO2层，建议控制在高 k/SiO2 界面处感应的界面偶极子层的力矩和极性。界面偶极子层是由氧离子从具有较高氧面密度 (σ) 的层迁移到较低 σ 的层形成的。当在 SiO2/HK2/HK1/SiO2 TCS 中按照 σHK1 > σSiO2 > σHK2 的顺序选择两种高 k 材料时，SiO2/HK2 和 HK1/SiO2 界面处的界面偶极子层的偶极子方向对齐. 此外，在转置的 SiO2/HK1/HK2/SiO2 TCS 中，总极性是相反的。该概念使用 Al2O3 和 Y2O3 层进行演示，因为它们提供了 σAl2O3 > σSiO2 > σY2O3 的顺序。使用超晶格技术制造的由SiO2/Y2O3/Al2O3/SiO2和SiO2/Al2O3/Y2O3/SiO2组成的两个堆叠序列样品...