Abstract The stability of various types of multiple Shockley type basal plane stacking fault in heavily nitrogen-doped 4H-SiC crystals was theoretically investigated on the basis of the quantum well action (QWA) mechanism. The energy levels of confined electrons within multiple Shockley stacking faults (SSFs) were calculated using the simple quantum well model and compared to the experimental values estimated from photoluminescence measurements. The formation energies of the stacking faults were also calculated on the basis of the axial next nearest neighbor Ising (ANNNI) model for SiC polytypes. Based on these physical and electronic parameters, the stability of multiple SSFs in heavily nitrogen-doped 4H-SiC crystals was discussed, and it was revealed that the stacking sequence of multiple SSFs largely affects their stability; SSFs having a cubic stacking sequence of medium thickness (five to six Si-C bilayer thickness) are stable in heavily nitrogen-doped 4H-SiC crystals at the typical growth and device processing temperatures of SiC, i.e., 1500–2600 K.

中文翻译：

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重氮掺杂 4H-SiC 晶体中多个 Shockley 型基面堆垛层错的稳定性

摘要 基于量子阱作用（QWA）机制，从理论上研究了重氮掺杂4H-SiC晶体中多种肖克利型基面堆垛层错的稳定性。使用简单量子阱模型计算多个肖克利堆垛层错 (SSF) 内受限电子的能级，并与光致发光测量估计的实验值进行比较。堆垛层错的形成能也基于 SiC 多型体的轴向次近邻 Ising (ANNNI) 模型计算。基于这些物理和电子参数，讨论了重氮掺杂4H-SiC晶体中多个SSFs的稳定性，发现多个SSFs的堆叠顺序对其稳定性有很大影响；