Photo- or photoelectric-gating modulation is a promising strategy for high-performance photodetectors, which amplifies photoresponsivity by long-lived trapped charges at the interface. However, the performance is normally limited by the uncontrollable trapping process. Here, we develop a large photoelectric-gating, which enhances interfacial charge trapping process by a van-der-Waals interface with an electric-gating tunable energy barrier in the band alignment. By synergy of photo-gating and electric-gating effects, responsivity and detectivity of 1,4-bis(4-methylstyryl)benzene/tungsten diselenide (WSe₂) increase by 25-fold and 3-fold to 3.6 × 10⁶ A/W and 8.6 × 10¹⁴ Jones. High-quality two-dimensional van-der-Waals interface is of great importance. Sufficient supply of gas-phase molecules in physical vapor deposition is pivotal to obtain such interface between organic crystal and WSe₂. As an application, an electric-gating switchable photodetector has been developed, showing great potential of this strategy not only in high-performance photodetectors but also in new photoelectrical devices.

光电门控或光电门控调制是高性能光电探测器的一种有前途的策略，它可以通过界面处的长期俘获电荷来放大光响应性。但是，性能通常受到无法控制的陷印过程的限制。在这里，我们开发了一种大型光电门控系统，该技术通过带范对准中的电门控可调能垒通过van-der-Waals界面增强了界面电荷捕获过程。通过光门效应和电门效应的协同作用，1,4-双（4-甲基苯乙烯基）苯/二硒钨（WSe ₂）的响应度和检测率分别提高了25倍和3倍，达到3.6×10 ⁶  A / W和8.6×10 ¹⁴琼斯 高质量的二维van-der-Waals界面非常重要。物理气相沉积中气相分子的充足供应对于获得有机晶体与WSe ₂之间的这种界面至关重要。作为一种应用，已开发出一种电动门控可切换光电探测器，不仅在高性能光电探测器中，而且在新的光电设备中，都显示出这种策略的巨大潜力。