Abstract Oxidation of chromium at 800 °C for 30 min at oxygen activity from 5.10−14 atm to 5.10−13 atm have been conducted to grow an insulating chromia. Microstructural and semiconducting properties have been investigated using electron microscopy and photoelectrochemistry. The scales always exhibit a duplex microstructure with equiaxed and columnar grains, as well as a both n-type and insulating semiconduction type. Successive oxidation tests have demonstrated the higher protective nature of this chromia scale compared to the air grown one. Chromia semiconducting properties are finally described vs. oxygen activity in a large range of variation.

中文翻译：

---

氧分压对纯铬热生长氧化铬半导体性能的影响

摘要 在 5.10-14 atm 到 5.10-13 atm 的氧活度下，在 800 °C 下氧化铬 30 分钟以生长绝缘氧化铬。已经使用电子显微镜和光电化学研究了微结构和半导体特性。鳞片总是表现出具有等轴和柱状晶粒的双相微观结构，以及 n 型和绝缘半导体类型。连续的氧化测试表明，与空气生长的氧化铬鳞片相比，这种氧化铬鳞片具有更高的保护性。最后描述了铬半导体特性与大范围变化中的氧活性。