A novel asymmetrical biindolo[2,3-b]quinoxaline derivative (IQIQ) was prepared via the CuI catalysed C-N Ullmann coupling method and fully characterized. For comparison, two solution-processing organic transistor memory devices (A and B) were constructed. In device A with IQIQ, the parameters of large memory window (48 V) but weak on/off current ratio (∼10¹ at 10⁴ s) indicated the good hole trapping ability determined by the matched HOMO level but weak endurance property of IQIQ. Meanwhile, device B with PS blended IQIQ presented not only similar large memory window but also apparently improved the hole endurance property of IQIQ determined by the blending material which intrinsically acted as the bifunctional tunneling:floating gate layer.

通过CuI催化的CN Ullmann偶联方法制备了一种新的不对称双吲哚并[2,3- b ]喹喔啉衍生物（IQIQ），并对其进行了充分表征。为了比较，构造了两个溶液处理有机晶体管存储器件（A和B）。在与设备A IQIQ，大容量内存窗口（48伏），但弱上/的参数关电流比（〜10 ¹  10个⁴  S）所示的良好的空穴捕集能力确定由匹配HOMO能级而是弱耐力特性IQIQ。同时，带有PS混合IQIQ的设备B不仅显示了类似的大存储窗口，而且还明显改善了PC的孔耐久性。IQIQ由混合材料确定，该混合材料本质上充当双功能隧穿：浮栅层。