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Electrical Rectifying and Photosensing Property of Schottky Diode Based on MoS2
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2018-07-04 00:00:00 , DOI: 10.1021/acsami.8b06078 Jing-Yuan Wu 1, 2 , Young Tea Chun 1 , Shunpu Li 1 , Tong Zhang 2 , Daping Chu 1
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2018-07-04 00:00:00 , DOI: 10.1021/acsami.8b06078 Jing-Yuan Wu 1, 2 , Young Tea Chun 1 , Shunpu Li 1 , Tong Zhang 2 , Daping Chu 1
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Heterojunction based on two-dimensional (2D) layered materials is an emerging topic in the field of nanoelectronics and optoelectronics. Here, molybdenum sulfide (MoS2)-based Schottky diodes were fabricated using the field-effect transistor configuration with asymmetric metal contact structure. Gold and chromium electrodes were employed as drain and source electrodes to form Ohmic and Schottky contact with MoS2, respectively. The devices exhibited electrical rectifying characteristic with the current rectifying ratio exceeding 103 and an ideal factor of 1.5. A physics model of the band diagram was proposed to analyze the gate-tunable rectifying behavior of the device. The dynamic rectification based on the diode circuit was further realized with the operating frequency up to 100 Hz. The devices were also demonstrated to show different sensitivities to the light under external biases in the opposite directions, with the highest photoresponsivity reaching 1.1 × 104 A/W and specific detectivity up to 8.3 × 1012 Jones at a forward drain bias of 10 V. This kind of 2D material-based Schottky diodes have the advantage of simplicity in design and fabrication, as well as superior electrical rectifying and photosensing characteristics, which have great potential for future integrated electronic and optoelectronic applications.
中文翻译：
基于MoS 2的肖特基二极管的电整流和光敏特性
基于二维（2D）分层材料的异质结是纳米电子学和光电子学领域的一个新兴话题。在此，使用具有不对称金属接触结构的场效应晶体管配置来制造基于硫化钼（MoS 2）的肖特基二极管。金和铬电极分别用作漏电极和源电极，以分别与MoS 2形成欧姆接触和肖特基接触。该器件具有电整流特性，电流整流比超过10 3理想因子为1.5。提出了能带图的物理模型来分析器件的门可调整流行为。进一步实现了基于二极管电路的动态整流，其工作频率高达100 Hz。还证明了该器件在相反方向的外部偏压下对光显示出不同的灵敏度，最高光响应性达到1.1×10 4 A / W，比检测率高达8.3×10 12 琼斯在10 V的正向漏极偏压下使用。这种基于2D材料的肖特基二极管具有设计和制造简单以及优异的电整流和光敏特性的优点，这对于未来的集成电子和光电应用具有巨大潜力。
更新日期：2018-07-04
中文翻译：
基于MoS 2的肖特基二极管的电整流和光敏特性
基于二维（2D）分层材料的异质结是纳米电子学和光电子学领域的一个新兴话题。在此，使用具有不对称金属接触结构的场效应晶体管配置来制造基于硫化钼（MoS 2）的肖特基二极管。金和铬电极分别用作漏电极和源电极，以分别与MoS 2形成欧姆接触和肖特基接触。该器件具有电整流特性，电流整流比超过10 3理想因子为1.5。提出了能带图的物理模型来分析器件的门可调整流行为。进一步实现了基于二极管电路的动态整流，其工作频率高达100 Hz。还证明了该器件在相反方向的外部偏压下对光显示出不同的灵敏度，最高光响应性达到1.1×10 4 A / W，比检测率高达8.3×10 12 琼斯在10 V的正向漏极偏压下使用。这种基于2D材料的肖特基二极管具有设计和制造简单以及优异的电整流和光敏特性的优点，这对于未来的集成电子和光电应用具有巨大潜力。
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