We report on novel total electron scattering cross section (TCS) measurements for electrons scattering from sevoflurane, at incident electron impact energies in the range 1-300 eV. The experimental results, obtained from a newly implemented magnetic beam apparatus based in Madrid, are compared with theoretical results from the independent atom model with screening corrected additivity rule including interference effects and rotational excitation (IAM-SCAR+I+R). A very good level of agreement has been found between the present experimental and theoretical data at above about 20 eV electron impact and to within the experimental uncertainties.

我们报告了新型电子总散射截面（TCS）测量值，该电子用于从七氟醚散射的电子，入射电子的冲击能量在1-300 eV范围内。从马德里新实施的磁束设备获得的实验结果与独立原子模型的理论结果进行了比较，并筛选出了包括干扰效应和旋转激发（IAM-SCAR + I + R）在内的校正加性规则。在目前的实验数据和理论数据之间，在大约20 eV以上的电子冲击下，并且在实验不确定性范围内，已经找到了非常好的一致性。