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Single-crystalline integrated 4H-SiC nanochannel array electrode: toward high-performance capacitive energy storage for robust wide-temperature operation†
Materials Horizons ( IF 12.2 ) Pub Date : 2018-07-03 00:00:00 , DOI: 10.1039/c8mh00474a
Weijun Li 1, 2, 3, 4, 5 , Qiao Liu 4, 5, 6, 7 , Shanliang Chen 4, 5, 6, 7 , Zhi Fang 4, 5, 6, 7 , Xu Liang 1, 2, 3, 4 , Guodong Wei 1, 2, 3, 4 , Lin Wang 4, 5, 6, 7 , Weiyou Yang 4, 5, 6, 7 , Yuan Ji 1, 2, 3, 4 , Liqiang Mai 8, 9, 10, 11, 12
Affiliation  

The exploration of energy conversion and storage devices for wide-temperature operation is presently a grand challenge. Herein, the single-crystalline integrated energy-storage units based on highly-oriented 4H-SiC nanochannel arrays (NCAs) were fabricated via an improved electrochemical anodic oxidation technique from 4H-SiC wafers. The as-prepared SiC NCAs electrode exhibits an areal capacitance of 14.8 mF cm−2 at 10 mV s−1, which is the highest for SiC electrodes ever reported and also 6-fold higher in comparison to that of SiC nanowire array electrode (NWAs, 2.32 mF cm−2). Moreover, the resultant 4H-SiC NCAs exhibit an extremely stable cycling performance in aqueous electrolytes, with higher than 95% retention of initial capacitance regardless of being serviced under low, high or cross-fade temperatures for 11 000 charge–discharge cycles, demonstrating that they are nearly full-featured for robust wide-temperature operation.

中文翻译:

单晶集成4H-SiC纳米通道阵列电极:面向高性能电容性储能,可实现稳定的宽温度运行

目前,探索用于宽温度运行的能量转换和存储设备是一个巨大的挑战。在本文中,通过改进的电化学阳极氧化技术,从4H-SiC晶片制造了基于高度取向的4H-SiC纳米通道阵列(NCA)的单晶集成储能单元。所制备的SiC NCAs电极在10 mV s -1处具有14.8 mF cm -2的面积电容,这是有史以来报道的SiC电极中最高的,并且比SiC纳米线阵列电极(NWAs)高出6倍。 ,2.32 mF厘米-2)。此外,所得的4H-SiC NCA在水性电解质中表现出极其稳定的循环性能,无论在低,高或淡入淡出的温度下进行11 000次充放电循环,其初始电容保持率均高于95%,这表明它们几乎具有全功能,可在强大的宽温度下运行。
更新日期:2018-07-03
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