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Model on transport phenomena and control of rod growth uniformity in siemens CVD reactor
Computers & Chemical Engineering ( IF 3.9 ) Pub Date : 2018-07-04 , DOI: 10.1016/j.compchemeng.2018.07.001
Xue-Gang Li , Wen-De Xiao

The transport phenomena in Siemens reactors has been investigated by using computational fluid dynamics (CFD) technique. The reaction kinetics was validated against two data sets of silicon epitaxial deposition experiments. Comparative simulations were carried out for four types of reactors with different configurations of gas supplying nozzles and offgas ports. The uniformity index was introduced to evaluate rod growth uniformity. The result showed that improper gas distributing system would result in zones of low velocity together with high temperature, and uneven species concentration distribution, finally cause low uniformity of rod growth. The reactor with a single offgas port at the center of the bottom plate was supposed to be best design among the four from both the performance and the equipment complexity points of view.



中文翻译:

西门子CVD反应器中的传输现象模型和棒生长均匀性控制

西门子反应堆中的输运现象已通过使用计算流体力学(CFD)技术进行了研究。针对硅外延沉积实验的两个数据集验证了反应动力学。对四种类型的反应器进行了比较模拟,这些反应器的供气喷嘴和排气口的配置不同。引入均匀度指数以评估棒生长均匀度。结果表明,不正确的气体分配系统会导致低速区域和高温,以及物种浓度分布不均匀,最终导致棒生长的均匀性低。从性能和设备复杂性的角度来看,在底板中央只有一个排气口的反应器是最好的设计。

更新日期:2018-07-04
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