Distinguishing Interface Magnetoresistance and Bulk Magnetoresistance through Rectification of Schottky Heterojunctions,ACS Applied Materials & Interfaces

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Distinguishing Interface Magnetoresistance and Bulk Magnetoresistance through Rectification of Schottky Heterojunctions
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2018-07-03 00:00:00 , DOI: 10.1021/acsami.8b06929
Qikun Huang ₁ , Jing Wang ₁ , Shiyang Lu ₁ , Yanxue Chen ₁ , Lihui Bai ₁ , Youyong Dai ₁ , Yufeng Tian ₁ , Shishen Yan _{1,

2}

Affiliation

High performance of many spintronic devices strongly depends on the spin-polarized electrical transport, especially the magnetoresistance (MR) in magnetic heterojunctions. However, it has been a great challenge to distinguish the bulk MR and interface MR by transport measurements because the bulk resistance and interface resistance formed a series circuit in magnetic heterojunctions. Here, a unique interface-sensitive rectification MR method is proposed to distinguish the interface MR and bulk MR of nonmagnetic In/GeO_x/n-Ge and magnetic Co/GeO_x/n-Ge diode-like heterojunctions. It is demonstrated that the low-field “butterfly” hysteresis loop observed only in the conventional MR curve originates from the anisotropic MR of ferromagnetic bulk Co layer, whereas the orbit-related large nonsaturating positive MR contains contributions from both the Schottky interface and bulk Ge substrate. This rectification MR method could be extended to magnetic heterojunctions with asymmetric potential barriers to realize a deeper understanding of the fundamental interface-related functionalities.

中文翻译：

通过整流肖特基异质结区分界面磁阻和体磁阻

许多自旋电子器件的高性能在很大程度上取决于自旋极化的电传输，特别是磁异质结中的磁阻（MR）。然而，通过输运测量来区分体MR和界面MR是一个巨大的挑战，因为体电阻和界面电阻在磁性异质结中形成了串联电路。在此，提出了一种独特的界面敏感整流MR方法，以区分非磁性In / GeO _x / n-Ge和磁性Co / GeO _x的界面MR和体MR。/ n-Ge二极管状异质结。结果表明，仅在常规MR曲线中观察到的低场“蝴蝶”磁滞回线源自铁磁块状Co层的各向异性MR，而与轨道相关的大非饱和正MR包含了肖特基界面和块状Ge的贡献。基质。这种整流MR方法可以扩展到具有非对称势垒的磁性异质结，以实现对与界面相关的基本功能的更深入的了解。

更新日期：2018-07-03

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