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Genesis and Effects of Swapping Bilayers in Hexagonal GeSb2Te4
Chemistry of Materials ( IF 7.2 ) Pub Date : 2018-07-02 00:00:00 , DOI: 10.1021/acs.chemmater.8b01900 Jiang-Jing Wang 1 , Jun Wang 1 , Hongchu Du 2 , Lu Lu 3 , Peter C. Schmitz 4 , Johannes Reindl 5 , Antonio M. Mio 5 , Chun-Lin Jia 2, 3 , Evan Ma 1, 6 , Riccardo Mazzarello 4 , Matthias Wuttig 5, 7 , Wei Zhang 1
Chemistry of Materials ( IF 7.2 ) Pub Date : 2018-07-02 00:00:00 , DOI: 10.1021/acs.chemmater.8b01900 Jiang-Jing Wang 1 , Jun Wang 1 , Hongchu Du 2 , Lu Lu 3 , Peter C. Schmitz 4 , Johannes Reindl 5 , Antonio M. Mio 5 , Chun-Lin Jia 2, 3 , Evan Ma 1, 6 , Riccardo Mazzarello 4 , Matthias Wuttig 5, 7 , Wei Zhang 1
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Disorder plays an essential role in shaping the transport properties of GeSbTe phase-change materials (PCMs) to enable nonvolatile memory technology. Recently, increasing efforts have been undertaken to investigate disorder in the stable hexagonal phase of GeSbTe compounds, focusing on a special type of swapping bilayer defects. This configuration has been claimed to be the key element for a new mechanism for phase-change memory. Here, we report a direct atomic-scale chemical identification of these swapping bilayer defects in hexagonal GeSb2Te4 together with nanoscale atomic modeling and simulations. We identify the intermixing of Sb and Te in the bilayer to be the essential ingredient for the stability of the defects, and elucidate their abundance as due to the small energy cost. The bilayer defects are demonstrated to be ineffective in altering the electron localization nature that is relevant to transport properties of hexagonal GeSb2Te4. Our work paves the way for future studies of layer-switching dynamics in GeSbTe at the atomic and electronic level, which could be important to understand the new switching mechanism relevant to interfacial phase-change memory.
中文翻译：
六角形GeSb 2 Te 4交换双层的成因及作用
无序在塑造GeSbTe相变材料（PCM）的传输特性以实现非易失性存储技术方面起着至关重要的作用。近来，已经进行了越来越多的努力来研究GeSbTe化合物的稳定六方相中的无序，着眼于一种特殊类型的交换双层缺陷。这种配置被认为是相变存储器新机制的关键要素。在此，我们报告了六角形GeSb 2 Te 4中这些交换双层缺陷的直接原子级化学鉴定。以及纳米级原子建模和模拟。我们确定双层中Sb和Te的混合是缺陷稳定性的必要成分，并由于能量成本低而阐明了它们的丰度。双层缺陷被证明在改变与六角形GeSb 2 Te 4的输运性质有关的电子局部化性质方面无效。我们的工作为将来在原子和电子层面研究GeSbTe中的层切换动力学奠定了基础，这对于理解与界面相变存储器相关的新切换机制可能很重要。
更新日期：2018-07-02
中文翻译：
六角形GeSb 2 Te 4交换双层的成因及作用
无序在塑造GeSbTe相变材料（PCM）的传输特性以实现非易失性存储技术方面起着至关重要的作用。近来，已经进行了越来越多的努力来研究GeSbTe化合物的稳定六方相中的无序，着眼于一种特殊类型的交换双层缺陷。这种配置被认为是相变存储器新机制的关键要素。在此，我们报告了六角形GeSb 2 Te 4中这些交换双层缺陷的直接原子级化学鉴定。以及纳米级原子建模和模拟。我们确定双层中Sb和Te的混合是缺陷稳定性的必要成分，并由于能量成本低而阐明了它们的丰度。双层缺陷被证明在改变与六角形GeSb 2 Te 4的输运性质有关的电子局部化性质方面无效。我们的工作为将来在原子和电子层面研究GeSbTe中的层切换动力学奠定了基础，这对于理解与界面相变存储器相关的新切换机制可能很重要。
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