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Low-temperature diffusion bonding of W/Mo joints with a thin Cu interlayer
Journal of Materials Processing Technology ( IF 6.7 ) Pub Date : 2018-12-01 , DOI: 10.1016/j.jmatprotec.2018.07.001
Mei Rao , Jian Zhang , Jiahui Ding , Guoqiang Luo , Qiang Shen , Lianmeng Zhang

Abstract By adding a thin Cu interlayer, refractory metals 93W and Mo1 can be reliably bonded by plasma activated sintering at low temperature. High resolution observations and an analysis of the joints indicate that the elements are sufficiently diffused at the interface of the W/Mo joints with a thin Cu interlayer without the formation of any intermetallic compounds. The maximum average shear strength of the W/Mo joint bonded at 700 °C for 20 min is greater than 210 MPa. Fe and Ni atoms in the 93 W alloy can diffuse into the thin Cu layer and form a Cu solid solution. The presence of Fe and Ni in the Cu solid solution promotes diffusion bonding at both the W/ thin Cu and thin Cu /Mo interfaces, which contributes to the high bonding strength of the W/Mo joint bonded at low bonding temperatures. The fracture model of the W/Mo joint bonded at 700 °C is a mixture of brittle fracture in the W base metal, ductile fracture in the thin Cu layer and brittle fracture in the Mo base material.

中文翻译:

具有薄铜夹层的 W/Mo 接头的低温扩散结合

摘要 通过添加薄的Cu中间层,可以在低温下通过等离子体活化烧结将难熔金属93W和Mo1可靠地结合起来。对接头的高分辨率观察和分析表明,元素在 W/Mo 接头与薄 Cu 夹层的界面处充分扩散,而没有形成任何金属间化合物。W/Mo 接头在 700°C 下粘合 20 分钟的最大平均剪切强度大于 210 MPa。93 W 合金中的 Fe 和 Ni 原子可以扩散到薄的 Cu 层中并形成 Cu 固溶体。Cu固溶体中Fe和Ni的存在促进了W/薄Cu和薄Cu/Mo界面的扩散结合,这有助于W/Mo接头在低结合温度下结合的高结合强度。
更新日期:2018-12-01
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